N-Channel 1200 V 65A (Tc) 278W (Tc) Through Hole TO-247
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DIW120SIC059-AQ

DigiKey Part Number
4878-DIW120SIC059-AQ-ND
Manufacturer
Diotec Semiconductor
Manufacturer Product Number
DIW120SIC059-AQ
Description
SICFET N-CH 1200V 65A TO-247-3
Manufacturer Standard Lead Time
9 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 65A (Tc) 278W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
DIW120SIC059-AQ Models
Product Attributes
Type
Description
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Category
Mfr
Diotec Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
53mOhm @ 33A, 18V
Vgs(th) (Max) @ Id
4V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs
121 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
2070 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 430
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Quantity
All prices are in GBP
Tube
QuantityUnit PriceExt Price
1£20.07000£20.07
30£15.05667£451.70
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£20.07000
Unit Price with VAT:£24.08400