SiCFET (Silicon Carbide) Single FETs, MOSFETs

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of 1,522

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IMBF170R1K0M1XTMA1 SICFET N-CH 1700V 5.2A TO263-7 Infineon Technologies	7,964 In Stock	1 : £3.50000 Cut Tape (CT) 1,000 : £1.25795 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.2A (Tc)	12V, 15V	1000mOhm @ 1A, 15V	5.7V @ 1.1mA	5 nC @ 12 V	+20V, -10V	275 pF @ 1000 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MSC750SMA170B SICFET N-CH 1700V 7A TO247-3 Microchip Technology	435 In Stock	1 : £4.04000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	+23V, -10V	184 pF @ 1360 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IMBF170R650M1XTMA1 SICFET N-CH 1700V 7.4A TO263-7 Infineon Technologies	931 In Stock	1 : £4.04000 Cut Tape (CT) 1,000 : £1.52510 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7.4A (Tc)	12V, 15V	650mOhm @ 1.5A, 15V	5.7V @ 1.7mA	8 nC @ 12 V	+20V, -10V	422 pF @ 1000 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MSC750SMA170B4 TRANS SJT 1700V TO247-4 Microchip Technology	809 In Stock	1 : £4.16000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	+23V, -10V	184 pF @ 1360 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
IMBF170R450M1XTMA1 SICFET N-CH 1700V 9.8A TO263-7 Infineon Technologies	586 In Stock	1 : £4.80000 Cut Tape (CT) 1,000 : £1.91759 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	9.8A (Tc)	12V, 15V	450mOhm @ 2A, 15V	5.7V @ 2.5mA	11 nC @ 12 V	+20V, -10V	610 pF @ 1000 V	-	107W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT2H12NZGC11 SICFET N-CH 1700V 3.7A TO3PFM Rohm Semiconductor	425 In Stock	1 : £5.11000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	3.7A (Tc)	18V	1.5Ohm @ 1.1A, 18V	4V @ 900µA	14 nC @ 18 V	+22V, -6V	184 pF @ 800 V	-	35W (Tc)	175°C (TJ)	-	-	Through Hole	TO-3PFM	TO-3PFM, SC-93-3
IMBG120R078M2HXTMA1 SICFET N-CH 1200V 29A TO263 Infineon Technologies	627 In Stock	1 : £5.20000 Cut Tape (CT) 1,000 : £2.13280 Tape & Reel (TR)	CoolSiC™ G2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	29A (Tc)	15V, 18V	78.1mOhm @ 8.9A, 18V	5.1V @ 2.8mA	20.6 nC @ 18 V	+23V, -10V	700 pF @ 800 V	-	158W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0350120D SICFET N-CH 1200V 7.6A TO247-3 Wolfspeed, Inc.	835 In Stock	1 : £5.51000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	7.6A (Tc)	15V	455mOhm @ 3.6A, 15V	3.6V @ 1mA	19 nC @ 15 V	+15V, -4V	345 pF @ 1000 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
AIMDQ75R060M1HXUMA1 SICFET N-CH 750V PG-HDSOP-22 Infineon Technologies	967 In Stock	1 : £5.98000 Cut Tape (CT) 750 : £2.57129 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	34A (Tc)	15V, 20V	78mOhm @ 11.1A, 18V	5.6V @ 4mA	23 nC @ 18 V	+23V, -5V	779 pF @ 500 V	-	167W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IMBG120R053M2HXTMA1 SICFET N-CH 1200V 41A TO263 Infineon Technologies	1,689 In Stock	1 : £6.17000 Cut Tape (CT) 1,000 : £2.67704 Tape & Reel (TR)	CoolSiC™ G2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V, 18V	52.6mOhm @ 13.2A, 18V	5.1V @ 4.1mA	30 nC @ 18 V	+23V, -10V	1010 pF @ 800 V	-	205W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	857 In Stock	1 : £6.20000 Cut Tape (CT) 1,000 : £2.69465 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V, 20V	49mOhm @ 22.9A, 18V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R450MT17J-TR 1700V 450M TO-263-7 G3R SIC MOSF Navitas Semiconductor, Inc.	696 In Stock	1 : £6.43000 Cut Tape (CT) 800 : £2.82926 Tape & Reel (TR)	G3R™, LoRing™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	8A (Tc)	15V	585mOhm @ 4A, 15V	2.7V @ 2mA	18 nC @ 15 V	+15V, -5V	454 pF @ 1000 V	-	71W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT3120ALGC11 SICFET N-CH 650V 21A TO247N Rohm Semiconductor	930 In Stock	1 : £6.69000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	18V	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	+22V, -4V	460 pF @ 500 V	-	103W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
C3M0160120J SICFET N-CH 1200V 17A TO263-7 Wolfspeed, Inc.	1,424 In Stock	1 : £6.74000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	24 nC @ 15 V	+15V, -4V	632 pF @ 1000 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
AIMCQ120R060M1TXTMA1 SIC_DISCRETE Infineon Technologies	2,145 In Stock	1 : £7.58000 Cut Tape (CT) 750 : £3.50967 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	44A (Tc)	18V, 20V	75mOhm @ 13A, 20V	5.1V @ 4.3mA	32 nC @ 20 V	+25V, -10V	880 pF @ 800 V	-	259W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
G3R160MT12J-TR 1200V 160M TO-263-7 G3R SIC MOSF Navitas Semiconductor, Inc.	1,210 In Stock	1 : £7.89000 Cut Tape (CT) 800 : £3.70030 Tape & Reel (TR)	G3R™, LoRing™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V, 18V	180mOhm @ 10A, 18V	2.7V @ 5mA	23 nC @ 15 V	+22V, -10V	724 pF @ 800 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZC120R034M2HXKSA1 SICFET N-CH 1200V 55A TO247 Infineon Technologies	166 In Stock	1 : £7.98000 Tube	CoolSiC™ G2	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	15V, 18V	34mOhm @ 20A, 18V	5.1V @ 6.4mA	45 nC @ 18 V	+23V, -7V	1510 pF @ 800 V	-	244W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17	TO-247-4
NTHL040N120M3S SIC MOS TO247-3L 40MOHM 1200V M3 onsemi	654 In Stock 280,350 Factory	1 : £8.17000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	54A (Tc)	18V	54mOhm @ 20A, 18V	4.4V @ 10mA	75 nC @ 18 V	+22V, -10V	1700 pF @ 800 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
C3M0060065J SICFET N-CH 650V 36A TO263-7 Wolfspeed, Inc.	2,688 In Stock	1 : £8.74000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	36A (Tc)	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	46 nC @ 15 V	+15V, -4V	1020 pF @ 600 V	-	136W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTBG030N120M3S SILICON CARBIDE (SIC) MOSFET - E onsemi	2,884 In Stock 20,800 Factory	1 : £8.98000 Cut Tape (CT) 800 : £4.38108 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	77A (Tc)	18V	39mOhm @ 30A, 18V	4.4V @ 15mA	107 nC @ 18 V	+22V, -10V	2430 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NVBG160N120SC1 SICFET N-CH 1200V 19.5A D2PAK onsemi	727 In Stock	1 : £9.03000 Cut Tape (CT) 800 : £4.41420 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19.5A (Tc)	20V	224mOhm @ 12A, 20V	4.3V @ 2.5mA	33.8 nC @ 20 V	+25V, -15V	678 pF @ 800 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMZA65R026M2HXKSA1 IMZA65R026M2HXKSA1 Infineon Technologies	636 In Stock	1 : £9.13000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	64A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
IMBG40R015M2HXTMA1 SIC-MOS Infineon Technologies	1,081 In Stock	1 : £9.24000 Cut Tape (CT) 1,000 : £4.54602 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	5.6V @ 9.7mA	62 nC @ 18 V	+23V, -7V	2730 pF @ 200 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-11	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMLT65R020M2HXTMA1 SICFET N-CH 650V 107A HDSOP-16 Infineon Technologies	903 In Stock	1 : £9.37000 Cut Tape (CT) 1,800 : £4.63562 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	107A (Tc)	15V, 18V	24mOhm @ 46.9A, 18V	5.6V @ 9.5mA	57 nC @ 18 V	+23V, -7V	2038 pF @ 400 V	-	454W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-6	16-PowerSOP Module
AIMBG120R040M1XTMA1 SICFET N-CH 1200V 54A TO-263 Infineon Technologies	1,053 In Stock	1 : £9.42000 Cut Tape (CT) 1,000 : £4.66842 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	54A (Tc)	18V, 20V	50mOhm @ 20A, 20V	5.1V @ 6.4mA	43 nC @ 20 V	+25V, -10V	1264 pF @ 800 V	-	268W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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