TO-247-3 Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRFP260MPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	3,718 In Stock	1 : £2.59000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP3710PBF MOSFET N-CH 100V 57A TO247AC Infineon Technologies	15,134 In Stock	1 : £2.74000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	57A (Tc)	10V	25mOhm @ 28A, 10V	4V @ 250µA	190 nC @ 10 V	±20V	3000 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP7530PBF MOSFET N-CH 60V 195A TO247 Infineon Technologies	5,227 In Stock	1 : £3.19000 Tube	HEXFET®, StrongIRFET™	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	6V, 10V	2mOhm @ 100A, 10V	3.7V @ 250µA	411 nC @ 10 V	±20V	13703 pF @ 25 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
STW75NF20 MOSFET N-CH 200V 75A TO247-3 STMicroelectronics	4,188 In Stock	1 : £3.39000 Tube	STripFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	75A (Tc)	10V	34mOhm @ 37A, 10V	4V @ 250µA	84 nC @ 10 V	±20V	3260 pF @ 25 V	-	190W (Tc)	-50°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IRFP260NPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	9,191 In Stock	1 : £3.57000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SPW20N60C3FKSA1 MOSFET N-CH 650V 20.7A TO247-3 Infineon Technologies	2,088 In Stock	1 : £3.71000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20.7A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	114 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
SUG90090E-GE3 MOSFET N-CH 200V 100A TO247AC Vishay Siliconix	1,435 In Stock	1 : £3.87000 Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	100A (Tc)	7.5V, 10V	9.5mOhm @ 20A, 10V	4V @ 250µA	129 nC @ 10 V	±20V	5220 pF @ 100 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP460APBF MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	3,430 In Stock	1 : £3.95000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	105 nC @ 10 V	±30V	3100 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
MSC750SMA170B SICFET N-CH 1700V 7A TO247-3 Microchip Technology	787 In Stock	1 : £3.98000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	+23V, -10V	184 pF @ 1360 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SPW17N80C3FKSA1 MOSFET N-CH 800V 17A TO247-3 Infineon Technologies	1,649 In Stock	1 : £4.02000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	290mOhm @ 11A, 10V	3.9V @ 1mA	177 nC @ 10 V	±20V	2320 pF @ 25 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IRFP9240PBF MOSFET P-CH 200V 12A TO247-3 Vishay Siliconix	1,918 In Stock	1 : £4.09000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	12A (Tc)	10V	500mOhm @ 7.2A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SUG80050E-GE3 MOSFET N-CH 150V 100A TO247AC Vishay Siliconix	2,238 In Stock	1 : £4.35000 Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	100A (Tc)	7.5V, 10V	5.4mOhm @ 20A, 10V	4V @ 250µA	165 nC @ 10 V	±20V	6250 pF @ 75 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP2907PBF MOSFET N-CH 75V 209A TO247AC Infineon Technologies	3,833 In Stock	1 : £4.37000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	209A (Tc)	10V	4.5mOhm @ 125A, 10V	4V @ 250µA	620 nC @ 10 V	±20V	13000 pF @ 25 V	-	470W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IPW60R070CFD7XKSA1 MOSFET N-CH 650V 31A TO247-3 Infineon Technologies	1,124 In Stock	1 : £4.73000 Tube	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	70mOhm @ 15.1A, 10V	4.5V @ 760µA	67 nC @ 10 V	±20V	2721 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-21	TO-247-3
IRFP90N20DPBF MOSFET N-CH 200V 94A TO247AC Infineon Technologies	1,806 In Stock	1 : £4.99000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	94A (Tc)	10V	23mOhm @ 56A, 10V	5V @ 250µA	270 nC @ 10 V	±30V	6040 pF @ 25 V	-	580W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
C3M0160120D SICFET N-CH 1200V 17A TO247-3 Wolfspeed, Inc.	1,440 In Stock	1 : £5.36000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	38 nC @ 15 V	+15V, -4V	632 pF @ 1000 V	-	97W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
G3R350MT12D SIC MOSFET N-CH 11A TO247-3 Navitas Semiconductor, Inc.	6,258 In Stock	1 : £5.42000 Tube	G3R™	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
FDH45N50F-F133 MOSFET N-CH 500V 45A TO247-3 onsemi	2,149 In Stock	1 : £5.50000 Tube	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	45A (Tc)	10V	120mOhm @ 22.5A, 10V	5V @ 250µA	137 nC @ 10 V	±30V	6630 pF @ 25 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IRF100P218AKMA1 MOSFET N-CH 100V 209A TO247AC Infineon Technologies	569 In Stock	1 : £5.51000 Tube	StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	1.28mOhm @ 100A, 10V	3.8V @ 278µA	412 nC @ 10 V	±20V	24000 pF @ 50 V	-	3.8W (Ta), 556W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IRFP4368PBFXKMA1 TRENCH 40<-<100V Infineon Technologies	722 In Stock	1 : £5.52000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	195A (Tc)	10V	1.85mOhm @ 195A, 10V	4V @ 250µA	570 nC @ 10 V	±20V	19230 pF @ 50 V	-	520W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
TK39N60W5,S1VF MOSFET N-CH 600V 38.8A TO247 Toshiba Semiconductor and Storage	634 In Stock	1 : £5.57000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	74mOhm @ 19.4A, 10V	4.5V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
IPW65R080CFDAFKSA1 MOSFET N-CH 650V 43.3A TO247-3 Infineon Technologies	609 In Stock	1 : £5.93000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	43.3A (Tc)	10V	80mOhm @ 17.6A, 10V	4.5V @ 1.76mA	161 nC @ 10 V	±20V	4440 pF @ 100 V	-	391W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3	TO-247-3
IRFP460PBF MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	13,872 In Stock	1 : £5.96000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4200 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFP22N50APBF MOSFET N-CH 500V 22A TO247-3 Vishay Siliconix	1,171 In Stock	1 : £6.09000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	230mOhm @ 13A, 10V	4V @ 250µA	120 nC @ 10 V	±30V	3450 pF @ 25 V	-	277W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
FDH055N15A MOSFET N-CH 150V 158A TO247-3 onsemi	1,178 In Stock	1 : £6.28000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	158A (Tc)	10V	5.9mOhm @ 120A, 10V	4V @ 250µA	92 nC @ 10 V	±20V	9445 pF @ 75 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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