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GeneSiC Semiconductor
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Datasheet
New Product
TO-247-4
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SCT040W120G3-4

DigiKey Part Number
497-SCT040W120G3-4-ND
Manufacturer
Manufacturer Product Number
SCT040W120G3-4
Description
SILICON CARBIDE POWER MOSFET 120
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 40A (Tc) 312W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
*
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
54mOhm @ 16A, 18V
Vgs(th) (Max) @ Id
4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 18 V
Vgs (Max)
+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1329 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
312W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
Base Product Number
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QuantityUnit PriceExt Price
1£11.77000£11.77
30£7.23833£217.15
120£6.24700£749.64
510£6.20898£3,166.58
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£11.77000
Unit Price with VAT:£14.12400