TO-247-4 Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4
MSC750SMA170B4
TRANS SJT 1700V TO247-4
Microchip Technology
807
In Stock
1 : £4.16000
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-
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Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
7A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1360 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
C3M0065100K
C3M0075120K
SICFET N-CH 1200V 30A TO247-4L
Wolfspeed, Inc.
411
In Stock
1 : £7.23000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
3,560
In Stock
1 : £7.95000
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Active
N-Channel
SiCFET (Silicon Carbide)
650 V
53A (Tc)
15V, 20V
30mOhm @ 27.9A, 20V
5.6V @ 5.7mA
34 nC @ 18 V
+23V, -7V
1214 pF @ 400 V
-
194W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
448~P/PG-TO247-4-17~~4
IMZC120R034M2HXKSA1
SICFET N-CH 1200V 55A TO247
Infineon Technologies
122
In Stock
1 : £7.98000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
34mOhm @ 20A, 18V
5.1V @ 6.4mA
45 nC @ 18 V
+23V, -7V
1510 pF @ 800 V
-
244W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
C3M0065100K
C3M0025065K
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : £9.69000
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N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
112 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4L
UJ4C075044K4S
750V/44MOHM, SIC, CASCODE, G4, T
onsemi
363
In Stock
6,600
Factory
1 : £10.33000
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SiCFET (Cascode SiCJFET)
750 V
37.4A (Tc)
12V
56mOhm @ 25A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
203W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
624
In Stock
1 : £10.55000
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SiCFET (Silicon Carbide)
650 V
83A (Tc)
15V, 20V
18mOhm @ 46.9A, 20V
5.6V @ 9.5mA
57 nC @ 18 V
+23V, -7V
2038 pF @ 400 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
Navitas Semiconductor, Inc.
742
In Stock
1 : £10.70000
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Last Time Buy
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4L
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
onsemi
2,732
In Stock
1 : £11.18000
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N-Channel
SiCFET (Cascode SiCJFET)
750 V
47A (Tc)
12V
41mOhm @ 30A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
NTH4L040N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
onsemi
1,392
In Stock
1 : £11.23000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
54A (Tc)
18V
54mOhm @ 20A, 18V
4.4V @ 10mA
75 nC @ 18 V
+22V, -10V
1700 pF @ 800 V
-
231W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
868
In Stock
1 : £12.33977
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SiCFET (Silicon Carbide)
650 V
103A (Tc)
15V, 20V
13.2mOhm @ 64.2A, 20V
5.6V @ 13mA
79 nC @ 18 V
+23V, -7V
2792 pF @ 400 V
-
341W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
C3M0015065K
C3M0015065K
SICFET N-CH 650V 120A TO247-4L
Wolfspeed, Inc.
197
In Stock
1 : £12.47000
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N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
448~P/PG-TO247-4-17~~4
IMZC120R017M2HXKSA1
SICFET N-CH 1200V 97A TO247
Infineon Technologies
482
In Stock
1 : £12.76000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
97A (Tc)
15V, 18V
17mOhm @ 40A, 18V
5.1V @ 12.7mA
89 nC @ 18 V
+23V, -7V
2910 pF @ 800 V
-
382W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
C3M0065100K
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
2,643
In Stock
1 : £13.04000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
162 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
184
In Stock
1 : £13.23000
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SiCFET (Silicon Carbide)
2000 V
34A (Tc)
15V, 18V
98mOhm @ 13A, 18V
5.5V @ 7.7mA
64 nC @ 18 V
+20V, -7V
-
-
267W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
TO-247-4
NTH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
1,056
In Stock
1 : £14.40000
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SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
151 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
352W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4L
UJ4SC075011K4S
750V/11MOHM, SIC, STACKED CASCOD
onsemi
471
In Stock
1,800
Factory
1 : £15.05000
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N-Channel
SiCFET (Cascode SiCJFET)
750 V
104A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4L
UF4SC120023K4S
1200V/23MOHM SIC STACKED FAST CA
onsemi
1,126
In Stock
1 : £15.53548
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N-Channel
SiCFET (Cascode SiCJFET)
1200 V
53A (Tc)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1430 pF @ 800 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
516
In Stock
1 : £15.79000
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N-Channel
SiCFET (Silicon Carbide)
650 V
144A (Tc)
15V, 20V
9.1mOhm @ 92.1A, 20V
5.6V @ 18.7mA
112 nC @ 18 V
+23V, -7V
4001 pF @ 400 V
-
440W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
TO-247-4L
UJ4C075018K4S
SICFET N-CH 750V 81A TO247-4
onsemi
650
In Stock
1 : £16.24000
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N-Channel
SiCFET (Cascode SiCJFET)
750 V
81A (Tc)
-
23mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
448~P/PG-TO247-4-17~~4
IMZC120R012M2HXKSA1
SICFET N-CH 1200V 129A TO247
Infineon Technologies
321
In Stock
1 : £16.76000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
129A (Tc)
15V, 18V
12mOhm @ 57A, 18V
5.1V @ 17.8mA
124 nC @ 18 V
+23V, -7V
4050 pF @ 800 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
Navitas Semiconductor, Inc.
1,389
In Stock
1 : £16.79000
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N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
FCH023N65S3L4
MOSFET N-CH 650V 75A TO247
onsemi
319
In Stock
63,000
Factory
1 : £18.05000
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MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
23mOhm @ 37.5A, 10V
4.5V @ 7.5mA
222 nC @ 10 V
±30V
7160 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
1,152
In Stock
1 : £19.06000
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SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 25 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
C3M0016120K1
C3M0016120K1
MOSFET N-CH 1200V 125A TO247-4L
Wolfspeed, Inc.
352
In Stock
1 : £19.29000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
125A (Tc)
15V
22mOhm @ 80.28A, 15V
3.8V @ 22.08mA
223 nC @ 15 V
+19V, -8V
6922 pF @ 1000 V
-
483W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.