TO-247N

SCT3022ALGC11

Digi-Key Part Number
SCT3022ALGC11-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
SCT3022ALGC11
Supplier
Description
SICFET N-CH 650V 93A TO247N
Manufacturer Standard Lead Time
30 Weeks
Detailed Description
N-Channel 650 V 93A (Tc) 339W (Tc) Through Hole TO-247N
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id
5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
133 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
2208 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
339W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
Tube
QtyUnit PriceExt Price
1$46.27000$46.27
10$43.17000$431.70
25$41.36000$1,034.00
100$37.48250$3,748.25