N-Channel 750 V 44A (Tj) 185W (Tc) Through Hole PG-TO247-4
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IMZA75R040M1HXKSA1

DigiKey Part Number
448-IMZA75R040M1HXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IMZA75R040M1HXKSA1
Description
SILICON CARBIDE MOSFET
Customer Reference
Detailed Description
N-Channel 750 V 44A (Tj) 185W (Tc) Through Hole PG-TO247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
44A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
37mOhm @ 16.6A, 20V
Vgs(th) (Max) @ Id
5.6V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1135 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
185W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4
Package / Case
TO-247-4
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In-Stock: 212
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Quantity
All prices are in GBP
Tube
QuantityUnit PriceExt Price
1£8.14000£8.14
30£4.85500£145.65
120£4.13283£495.94
510£3.84980£1,963.40
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£8.14000
Unit Price with VAT:£9.76800