Product Highlights

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Image of Renesas TP65H030G4P 650 V, 30 mΩ SuperGaN FET TP65H030G4Px 650 V, 30 mΩ SuperGaN FET Publish Date: 2025-09-30

The Renesas TP65H030G4Px 650 V, 30 mΩ gallium nitride (GaN) FET is a normally-off device using the Renesas Gen IV plus SuperGaN platform.

Image of Transphorm Evaluation Boards and Kits SuperGaN® Evaluation Boards and Kits Publish Date: 2023-05-24

Transphorm’s SuperGaN® evaluation boards and kits deliver an easy-to-use platform to investigate the benefits of GaN with various topologies.

Image of Transphorm's TP65H035G4WS SuperGaN® 35mΩ GaN FET TP65H035G4WS SuperGaN® 35mΩ GaN FET Publish Date: 2022-05-26

Transphorm’s SuperGaN® FET offers high reliability, high efficiency, and high voltage power conversion in an easy-to-drive JEDEC-qualified device.

Image of Transphorm's TDTTP2500B066B-KIT 2.5 kW Totem-Pole PFC GaN Eval Board TDTTP2500B066B-KIT 2.5 kW Totem-Pole PFC GaN Eval Board Publish Date: 2021-01-18

Transphorm's TDTTP2500B066B-KIT 2.5 kW Totem-Pole PFC GaN evaluation board is suitable for applications such as datacenter power supplies.

Image of Transphorm's TDTTP4000W065AN 4 kW PFC GaN Evaluation Board with Analog Control Bridgeless Totem-pole PFC GaN Eval Board with Analog Control Publish Date: 2020-08-25

Transphorm’s high-efficiency TDTTP4000W065AN evaluation board with analog control is designed for single-phase AC-to-DC power conversion up to 4 kW.

TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs - Transphorm TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs Publish Date: 2020-07-28

Transphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices, the TP65H035G4WS and TP65H300G4LSG.

Image of Transphorm’s TP90H050WS 900 V 50 mΩ GaN FET in TO-247 TP90H050WS 900 V 50 mΩ GaN FET in TO-247 Publish Date: 2020-07-20

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Image of Transphorm's 4 kW Bridge-Less Totem-Pole PFC Evaluation Board 4 kW Bridgeless Totem-Pole PFC Evaluation Board Updated: 2020-10-01

Transphorm's 4 kW bridgeless totem-pole PFC evaluation board has high efficiency single-phase AC/DC conversion.

Isolated Gate Driver Plus GaN FET Reference Designs - Skyworks Solutions and Transphorm Isolated Gate Driver Plus High-Voltage GaN FET Reference Designs Publish Date: 2019-07-01

Skyworks Solutions' and Transphorm's partnership features a reference design that simplifies the evaluation of high voltage GaN FETs.

Image of Transphorm TP65H035WSQA Gen III AEC-Q101 Qualified GaN FET TP65H035WSQA Gen III AEC-Q101-Qualified GaN FET Publish Date: 2019-04-03

Transphorm’s latest Gen III GaN FET offers high-reliability, high-efficiency, high-voltage power conversion in an easy-to-drive automotive-qualified device.

Transphorm Design Resources Design Resources Publish Date: 2019-01-07

Explore an array of tools and resources from Transphorm to assist with GaN application design

Image of Transphorm's TP65H050WS/TP65H035WS GaN FETs TP65H050WS/TP65H035WS Third Generation (Gen III) Gallium Nitride (GaN) Field-Effect Transistors (FETs) Publish Date: 2018-11-15

Transphorm's TP65H050WS and TP65H035WS Gen III GaN FETs feature increased noise immunity and increased gate reliability resulting in quiet switching.

Image of Transphorm's TP65H035WS Cascode GaN FET TP65H035WS Cascode Gallium Nitride (GaN) FET Publish Date: 2018-08-08

Transphorm's TP65H035WS cascode GaN FET offers superior reliability, performance, and improved efficiency over silicon.

TDTTP4000W066B-KIT 4 kW Totem-Pole PFC GaN Eval Board - Transphorm TDTTP4000W066B-KIT 4 kW Totem-Pole PFC GaN Eval Board Publish Date: 2017-12-27

Transphorm's 4 kW totem-pole power factor correction (PFC) GaN evaluation board is ideal for data center and broad industrial power supply applications.

TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board - Transphorm TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board Publish Date: 2017-12-27

Transphorm's 2.5 kW bridgeless totem-pole power factor correction (PFC) GaN evaluation platform features the TPH3212PS 650 V 72 mΩ GaN FET.

Image of Transphorm's TDHBG2500P100: 2.5 kW Half-Bridge Evaluation Board TDHBG2500P100 2.5 kW Half-Bridge Evaluation Board Publish Date: 2017-01-30

The TDHBG2500P100 half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with Transphorm’s 650 V GaN FETs.