TP65H030G4Px 650 V, 30 mΩ SuperGaN FET
Publish Date: 2025-09-30
The Renesas TP65H030G4Px 650 V, 30 mΩ gallium nitride (GaN) FET is a normally-off device using the Renesas Gen IV plus SuperGaN platform.
SuperGaN® Evaluation Boards and Kits
Publish Date: 2023-05-24
Transphorm’s SuperGaN® evaluation boards and kits deliver an easy-to-use platform to investigate the benefits of GaN with various topologies.
TP65H035G4WS SuperGaN® 35mΩ GaN FET
Publish Date: 2022-05-26
Transphorm’s SuperGaN® FET offers high reliability, high efficiency, and high voltage power conversion in an easy-to-drive JEDEC-qualified device.
TDTTP2500B066B-KIT 2.5 kW Totem-Pole PFC GaN Eval Board
Publish Date: 2021-01-18
Transphorm's TDTTP2500B066B-KIT 2.5 kW Totem-Pole PFC GaN evaluation board is suitable for applications such as datacenter power supplies.
Bridgeless Totem-pole PFC GaN Eval Board with Analog Control
Publish Date: 2020-08-25
Transphorm’s high-efficiency TDTTP4000W065AN evaluation board with analog control is designed for single-phase AC-to-DC power conversion up to 4 kW.
TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
Publish Date: 2020-07-28
Transphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices, the TP65H035G4WS and TP65H300G4LSG.
TP90H050WS 900 V 50 mΩ GaN FET in TO-247
Publish Date: 2020-07-20
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
4 kW Bridgeless Totem-Pole PFC Evaluation Board
Updated: 2020-10-01
Transphorm's 4 kW bridgeless totem-pole PFC evaluation board has high efficiency single-phase AC/DC conversion.
Skyworks Solutions' and Transphorm's partnership features a reference design that simplifies the evaluation of high voltage GaN FETs.
TP65H035WSQA Gen III AEC-Q101-Qualified GaN FET
Publish Date: 2019-04-03
Transphorm’s latest Gen III GaN FET offers high-reliability, high-efficiency, high-voltage power conversion in an easy-to-drive automotive-qualified device.
Design Resources
Publish Date: 2019-01-07
Explore an array of tools and resources from Transphorm to assist with GaN application design
TP65H050WS/TP65H035WS Third Generation (Gen III) Gallium Nitride (GaN) Field-Effect Transistors (FETs)
Publish Date: 2018-11-15
Transphorm's TP65H050WS and TP65H035WS Gen III GaN FETs feature increased noise immunity and increased gate reliability resulting in quiet switching.
TP65H035WS Cascode Gallium Nitride (GaN) FET
Publish Date: 2018-08-08
Transphorm's TP65H035WS cascode GaN FET offers superior reliability, performance, and improved efficiency over silicon.
TDTTP4000W066B-KIT 4 kW Totem-Pole PFC GaN Eval Board
Publish Date: 2017-12-27
Transphorm's 4 kW totem-pole power factor correction (PFC) GaN evaluation board is ideal for data center and broad industrial power supply applications.
TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board
Publish Date: 2017-12-27
Transphorm's 2.5 kW bridgeless totem-pole power factor correction (PFC) GaN evaluation platform features the TPH3212PS 650 V 72 mΩ GaN FET.
TDHBG2500P100 2.5 kW Half-Bridge Evaluation Board
Publish Date: 2017-01-30
The TDHBG2500P100 half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with Transphorm’s 650 V GaN FETs.

