Diode 650 V 2A Through Hole TO-220-2L
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS2E65H,S1Q

DigiKey Part Number
264-TRS2E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS2E65H,S1Q
Description
DIODE SIL CARBIDE 650V 2A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 2A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
2A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 2 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
135pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 260
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Quantity
All prices are in GBP
Tube
QuantityUnit PriceExt Price
1£1.88000£1.88
50£0.92020£46.01
100£0.82700£82.70
500£0.66372£331.86
1,000£0.61122£611.22
2,000£0.56709£1,134.18
5,000£0.55437£2,771.85
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£1.88000
Unit Price with VAT:£2.25600