TO-220-2 Single Diodes

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Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
16,750
In Stock
1 : £0.49000
Tube
-
Tube
Active
Schottky
45 V
20A
730 mV @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 mA @ 45 V
1400pF @ 5V, 1MHz
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MUR880EG
MBR10100G
DIODE SCHOTTKY 100V 10A TO2202
onsemi
9,534
In Stock
1 : £0.52000
Tube
Tube
Active
Schottky
100 V
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
MUR880EG
MUR1520G
DIODE STANDARD 200V 15A TO2202
onsemi
2,053
In Stock
1 : £0.67000
Tube
Tube
Active
Standard
200 V
15A
1.05 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
MUR880EG
MUR1540G
DIODE STANDARD 400V 15A TO2202
onsemi
1,571
In Stock
1 : £0.69000
Tube
Tube
Active
Standard
400 V
15A
1.25 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 400 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
S5D10170A2
12TQ200
DIODE SCHOTTKY 200V 15A TO220AC
SMC Diode Solutions
5,404
In Stock
1 : £1.02000
Tube
-
Tube
Active
Schottky
200 V
15A
920 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
550 µA @ 200 V
300pF @ 5V, 1MHz
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
13,974
In Stock
1 : £1.16000
Tube
-
Tube
Active
Standard
800 V
20A
1.1 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
100 µA @ 800 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
MUR880EG
MUR860G
DIODE STANDARD 600V 8A TO2202
onsemi
22,879
In Stock
1 : £1.19000
Tube
Tube
Active
Standard
600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 600 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
9,190
In Stock
1 : £1.21000
Tube
Tube
Active
Standard
1200 V
6A
3.9 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
80 ns
5 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
6,810
In Stock
1 : £1.26000
Tube
Tube
Active
Standard
600 V
30A
2.6 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
50 µA @ 600 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MUR880EG
MUR8100EG
DIODE STANDARD 1000V 8A TO2202
onsemi
3,649
In Stock
1 : £1.62000
Tube
Tube
Active
Standard
1000 V
8A
1.8 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
25 µA @ 1000 V
-
-
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
5,201
In Stock
1 : £1.64000
Tube
-
Tube
Active
Standard
1200 V
10A
1.33 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
310 ns
100 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
DSEI25-06A
DSEI8-06A
DIODE STANDARD 600V 8A TO220AC
IXYS
7,903
In Stock
1 : £1.81000
Tube
Tube
Active
Standard
600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
TO-220-2
ISL9R1560P2-F085
DIODE AVALANCHE 600V 15A TO2202
onsemi
4,601
In Stock
1 : £2.02000
Tube
Tube
Active
Avalanche
600 V
15A
2.2 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
100 µA @ 600 V
-
Automotive
AEC-Q101
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
DSEI25-06A
DSEI12-12A
DIODE STANDARD 1200V 11A TO220AC
IXYS
5,856
In Stock
1 : £2.35000
Tube
-
Tube
Active
Standard
1200 V
11A
2.6 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
250 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
8,000
In Stock
1 : £2.36000
Tube
Tube
Active
Standard
1200 V
30A
2.5 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
58 ns
50 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
TO-220-2
C3D06060A
DIODE SIL CARB 600V 19A TO220-2
Wolfspeed, Inc.
7,159
In Stock
1 : £2.59000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
19A
1.8 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
294pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
UJ3D06508TS
UJ3D1202TS
DIODE SIL CARBIDE 1200V 2A TO220
onsemi
6,499
In Stock
7,000
Factory
1 : £2.89000
Tube
-
Tube
Last Time Buy
SiC (Silicon Carbide) Schottky
1200 V
2A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
22 µA @ 1200 V
109pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
DSEI25-06A
DSEI20-12A
DIODE STANDARD 1200V 17A TO220AC
IXYS
8,073
In Stock
1 : £3.54000
Tube
-
Tube
Active
Standard
1200 V
17A
2.15 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
750 µA @ 1200 V
-
-
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
TO-220-2
IDH10G120C5XKSA1
DIODE SIC 1.2KV 10A PGTO2201
Infineon Technologies
2,760
In Stock
1 : £3.64000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
10A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
62 µA @ 1200 V
525pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
TO-220-2
C3D10060A
DIODE SIL CARB 600V 30A TO220-2
Wolfspeed, Inc.
4,390
In Stock
1 : £3.78000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
30A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 600 V
480pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
IDH20G65C6XKSA1
IDH12G65C6XKSA1
DIODE SIL CARB 650V 27A PGTO220
Infineon Technologies
2,441
In Stock
1 : £3.81000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
27A
1.35 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 420 V
594pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
TO-220-2
C4D05120A
DIODE SIL CARB 1200V 19A TO220
Wolfspeed, Inc.
2,398
In Stock
1 : £4.06000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
19A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
150 µA @ 1200 V
390pF @ 0V, 1MHz
-
-
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
TO-220-2
IDH12SG60CXKSA2
DIODE SIL CARB 600V 12A PGTO2201
Infineon Technologies
1,263
In Stock
1 : £4.69000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
600 V
12A
2.1 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
310pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
RFV15TG6SGC9
SCS205KGC17
DIODE SIC 1.2KV 5A TO220ACFP
Rohm Semiconductor
1,000
In Stock
1 : £4.79000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
5A
1.6 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 1200 V
270pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
TO-220ACFP
175°C
IDH20G65C6XKSA1
IDH20G65C6XKSA1
DIODE SIL CARB 650V 41A PGTO220
Infineon Technologies
3,083
In Stock
1 : £5.55000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
650 V
41A
1.35 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
67 µA @ 420 V
970pF @ 1V, 1MHz
-
-
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
Showing
of 2,113

Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.