TO-247
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S2M0160120D

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1655-S2M0160120D-ND
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S2M0160120D
cms-description
MOSFET SILICON CARBIDE SIC 1200V
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12 Weeks
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cms-detailed-description
N-Channel 1200 V 17A (Tc) 130W (Tc) Through Hole TO-247AD
Datasheet
 Datasheet
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Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
196mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
26.5 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
513 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
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In-Stock: 240
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Tube
cms-quantityUnit Pricecms-ext-price
1£4.01000£4.01
10£2.66200£26.62
300£1.66657£499.97
600£1.54825£928.95
1,200£1.48674£1,784.09
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Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£4.01000
Unit Price with VAT:£4.81200