NTHL022N120M3S

DigiKey Part Number
5556-NTHL022N120M3S-ND
Manufacturer
Manufacturer Product Number
NTHL022N120M3S
Description
SILICON CARBIDE (SIC) MOSFET ELI
Manufacturer Standard Lead Time
18 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
139 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3130 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
352W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
In-Stock: 167
Can ship immediately
All prices are in GBP
Tube
QuantityUnit PriceExt Price
1£13.26000£13.26
10£9.90600£99.06
450£8.82664£3,971.99
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£13.26000
Unit Price with VAT:£15.91200