Name: NTH4L025N065SC1
Brand: onsemi
SKU: 5556-NTH4L025N065SC1-ND
Price: 19.728 GBP
Availability: InStock

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NTH4L025N065SC1
DigiKey Part Number	5556-NTH4L025N065SC1-ND
Manufacturer	onsemi
Manufacturer Product Number	NTH4L025N065SC1
Description	SILICON CARBIDE (SIC) MOSFET - 1
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet
EDA/CAD Models	NTH4L025N065SC1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.3V @ 15.5mA
Mfr onsemi	Gate Charge (Qg) (Max) @ Vgs 164 nC @ 18 V
Packaging Tube	Vgs (Max) +22V, -8V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 15 V
FET Type N-Channel	Power Dissipation (Max) 348W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 99A (Tc)	Supplier Device Package TO-247-4L
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 28.5mOhm @ 45A, 18V