IRF5210LPBF Infineon Technologies | Discrete Semiconductor Products

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IRF5210LPBF
DigiKey Part Number	IRF5210LPBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRF5210LPBF
Description	MOSFET P-CH 100V 38A TO262
Customer Reference
Detailed Description	P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number	IRF5210