TO-262-3 Long Leads, I2PAK, TO-262AA Single FETs, MOSFETs

Results: 893
Manufacturer
Alpha & Omega Semiconductor Inc.Fairchild SemiconductorGood-Ark SemiconductorHarris CorporationInfineon TechnologiesInternational RectifierIXYSNEC CorporationNexperia USA Inc.NXP SemiconductorsNXP USA Inc.onsemiRenesasRenesas Electronics Corporation
Series
-AlphaMOSAlphaSGT™aMOS5™aMOS™CoolMOS®CoolMOS™CoolMOS™ CECoolMOS™ CFD2CoolMOS™ E6DeepGATE™, STripFET™ VIDeepGATE™, STripFET™ VII
Packaging
BulkTape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V24 V25 V30 V40 V55 V60 V75 V80 V100 V108 V120 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)1.7A (Tc)1.8A (Tc)2A (Tc)2.1A (Tc)2.2A (Tc)2.3A (Tc)2.4A (Tc)2.5A (Tc)2.7A (Tc)2.8A (Tc)3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V2.8V, 10V4V, 10V4V, 5V4.3V, 10V4.5V, 10V4.5V, 7V5V5V, 10V6V, 10V7V, 10V8V, 10V10V
Rds On (Max) @ Id, Vgs
1.3mOhm @ 25A, 10V1.6mOhm @ 100A, 10V1.6mOhm @ 25A, 10V1.65mOhm @ 195A, 10V1.7mOhm @ 195A, 10V1.7mOhm @ 25A, 10V1.7mOhm @ 60A, 10V1.75mOhm @ 195A, 10V1.8mOhm @ 100A, 10V1.8mOhm @ 25A, 10V1.8mOhm @ 60A, 10V1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA2V @ 130µA2V @ 1mA2V @ 20µA2V @ 250µA2V @ 253µA2V @ 2mA2V @ 37µA2V @ 40µA2V @ 60µA2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V5.2 nC @ 5 V5.2 nC @ 10 V6 nC @ 5 V6 nC @ 10 V6.1 nC @ 5 V6.4 nC @ 5 V6.5 nC @ 10 V7 nC @ 10 V7.2 nC @ 4.5 V7.5 nC @ 10 V8 nC @ 5 V
Vgs (Max)
+5V, -16V±8V±10V±12V±15V±16V±18V+20V, -16V±20V±25V±30V30V
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 25 V140 pF @ 25 V170 pF @ 25 V180 pF @ 25 V200 pF @ 25 V220 pF @ 25 V230 pF @ 25 V235 pF @ 25 V240 pF @ 25 V250 pF @ 25 V255 pF @ 100 V260 pF @ 25 V
Power Dissipation (Max)
1.5W (Ta), 119W (Tc)1.5W (Ta), 156W (Tc)1.65W (Ta), 65W (Tc)1.65W (Ta), 90W (Tc)1.8W (Ta), 115W (Tc)1.8W (Ta), 120W (Tc)1.8W (Ta), 143W (Tc)1.8W (Ta), 200W (Tc)1.9W (Ta), 250W (Tc)1.9W (Ta), 300W (Tc)1.9W (Ta), 333W (Tc)1.9W (Ta), 500W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-60°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
I2PAKI2PAK (TO-262)PG-TO262PG-TO262-3PG-TO262-3-1PG-TO262-3-901TO-262TO-262 (I2PAK)TO-262-3TO-262AATO-262FTO-263 (MP-25SK)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-262-3
IRF4905LPBF
MOSFET P-CH 55V 42A TO262
Infineon Technologies
1,343
In Stock
1 : £2.66000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRF1404LPBF
MOSFET N-CH 40V 162A TO262
Infineon Technologies
4,589
In Stock
1 : £2.71000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
162A (Tc)
10V
4mOhm @ 95A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
7360 pF @ 25 V
-
3.8W (Ta), 200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL3206PBF
MOSFET N-CH 60V 120A TO262
Infineon Technologies
1,000
In Stock
1 : £2.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
120A (Tc)
10V
3mOhm @ 75A, 10V
4V @ 150µA
170 nC @ 10 V
±20V
6540 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI086N10N3GXKSA1
MOSFET N-CH 100V 80A TO262-3
Infineon Technologies
247
In Stock
1 : £1.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
8.6mOhm @ 73A, 10V
3.5V @ 75µA
55 nC @ 10 V
±20V
3980 pF @ 50 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3 Long Leads
STI24N60M2
MOSFET N-CH 600V 18A I2PAK
STMicroelectronics
2,180
In Stock
1 : £1.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
190mOhm @ 9A, 10V
4V @ 250µA
29 nC @ 10 V
±25V
1060 pF @ 100 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL7437PBF
MOSFET N-CH 40V 195A TO262
Infineon Technologies
2,371
In Stock
1 : £2.19000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.8mOhm @ 100A, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7330 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI90N04S402AKSA1
MOSFET N-CH 40V 90A TO262-3
Infineon Technologies
439
In Stock
1 : £2.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
90A (Tc)
10V
2.5mOhm @ 90A, 10V
4V @ 95µA
118 nC @ 10 V
±20V
9430 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRF840ALPBF
MOSFET N-CH 500V 8A I2PAK
Vishay Siliconix
312
In Stock
1 : £2.92000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
38 nC @ 10 V
±30V
1018 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI045N10N3GXKSA1
MOSFET N-CH 100V 100A TO262-3
Infineon Technologies
894
In Stock
1 : £3.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4.5mOhm @ 100A, 10V
3.5V @ 150µA
117 nC @ 10 V
±20V
8410 pF @ 50 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
FDI9406_F085
FDI045N10A-F102
MOSFET N-CH 100V 120A I2PAK
onsemi
1,115
In Stock
1 : £3.37000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
10V
4.5mOhm @ 100A, 10V
4V @ 250µA
74 nC @ 10 V
±20V
5270 pF @ 50 V
-
263W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
426
In Stock
1 : £4.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
112A (Tc)
8V, 10V
7.6mOhm @ 56A, 10V
4.6V @ 160µA
61 nC @ 10 V
±20V
4700 pF @ 75 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI075N15N3GXKSA1
MOSFET N-CH 150V 100A TO262-3
Infineon Technologies
991
In Stock
1 : £4.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
100A (Tc)
8V, 10V
7.5mOhm @ 100A, 10V
4V @ 270µA
93 nC @ 10 V
±20V
5470 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
2,978
In Stock
1 : £1.54000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
100A (Ta)
10V
3.7mOhm @ 50A, 10V
-
100 nC @ 10 V
±20V
5550 pF @ 25 V
-
1.5W (Ta), 119W (Tc)
150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
1,470
In Stock
1 : £1.73000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
10V
4.6mOhm @ 50A, 10V
-
133 nC @ 10 V
±20V
7730 pF @ 25 V
-
1.5W (Ta), 156W (Tc)
150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
FCI7N60
FCI7N60
MOSFET N-CH 600V 7A I2PAK
onsemi
2,964
In Stock
1 : £2.40000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
600mOhm @ 3.5A, 10V
5V @ 250µA
30 nC @ 10 V
±30V
920 pF @ 25 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262-3
IRFSL3207ZPBF
MOSFET N-CH 75V 120A TO262
Infineon Technologies
857
In Stock
1 : £2.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
120A (Tc)
10V
4.1mOhm @ 75A, 10V
4V @ 150µA
170 nC @ 10 V
±20V
6920 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRF840LCLPBF
MOSFET N-CH 500V 8A I2PAK
Vishay Siliconix
1,965
In Stock
1 : £2.44000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
39 nC @ 10 V
±30V
1100 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRFBE30LPBF
MOSFET N-CH 800V 4.1A I2PAK
Vishay Siliconix
989
In Stock
1 : £2.75000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
4.1A (Tc)
10V
3Ohm @ 2.5A, 10V
4V @ 250µA
78 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRF740ALPBF
MOSFET N-CH 400V 10A I2PAK
Vishay Siliconix
615
In Stock
1 : £2.92000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
10A (Tc)
10V
550mOhm @ 6A, 10V
4V @ 250µA
36 nC @ 10 V
±30V
1030 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
IRF840ALPBF
IRFSL9N60APBF
MOSFET N-CH 600V 9.2A I2PAK
Vishay Siliconix
900
In Stock
1 : £2.98000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
9.2A (Tc)
10V
750mOhm @ 5.5A, 10V
4V @ 250µA
49 nC @ 10 V
±30V
1400 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
7,987
In Stock
1 : £3.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
125mOhm @ 14A, 10V
4.5V @ 250µA
39 nC @ 10 V
±20V
2993 pF @ 100 V
-
312.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI70N04S406AKSA1
MOSFET N-CH 40V 70A TO262-3
Infineon Technologies
500
In Stock
1 : £1.71000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
70A (Tc)
10V
6.5mOhm @ 70A, 10V
4V @ 26µA
32 nC @ 10 V
±20V
2550 pF @ 25 V
-
58W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
PG-TO262-3-1
IPI80N06S407AKSA2
MOSFET N-CH 60V 80A TO262-3
Infineon Technologies
675
In Stock
1 : £1.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
80A (Tc)
10V
7.4mOhm @ 80A, 10V
4V @ 40µA
56 nC @ 10 V
±20V
4500 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI80N04S403AKSA1
MOSFET N-CH 40V 80A TO262-3
Infineon Technologies
498
In Stock
1 : £1.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
80A (Tc)
10V
3.7mOhm @ 80A, 10V
4V @ 53µA
66 nC @ 10 V
±20V
5260 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
AUIRFSL6535 back
IPI120N04S402AKSA1
MOSFET N-CH 40V 120A TO262-3
Infineon Technologies
500
In Stock
1 : £2.09000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
10V
2.1mOhm @ 100A, 10V
4V @ 110µA
134 nC @ 10 V
±20V
10740 pF @ 25 V
-
158W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
Showing
of 893

TO-262-3 Long Leads, I2PAK, TO-262AA Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.