Name: IMBG65R010M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG65R010M2HXTMA1TR-ND
Price: 19.668 GBP
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMBG65R010M2HXTMA1
DigiKey Part Number	448-IMBG65R010M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG65R010M2HXTMA1CT-ND - Cut Tape (CT) 448-IMBG65R010M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG65R010M2HXTMA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 158A (Tc) 535W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet
EDA/CAD Models	IMBG65R010M2HXTMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 9.1mOhm @ 92.1A, 20V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.6V @ 18.7mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 112 nC @ 18 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) +23V, -7V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4001 pF @ 400 V
FET Type N-Channel	Power Dissipation (Max) 535W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 650 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 158A (Tc)	Supplier Device Package PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA