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N-Channel 1200 V 108A (Tc) 313W (Tc) Through Hole TO-247-4
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DMWSH120H18HM4Q

DigiKey Part Number
31-DMWSH120H18HM4Q-ND
Manufacturer
Diodes Incorporated
Manufacturer Product Number
DMWSH120H18HM4Q
Description
SIC MOSFET BVDSS: >1000V TO247-4
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 108A (Tc) 313W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Diodes Incorporated
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4.4V @ 37mA
Gate Charge (Qg) (Max) @ Vgs
158 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
4206 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 30
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Quantity
All prices are in GBP
Tube
QuantityUnit PriceExt Price
1£28.76000£28.76
30£19.03033£570.91
120£17.71592£2,125.91
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£28.76000
Unit Price with VAT:£34.51200