AOI11S60 is Obsolete and no longer manufactured.
Available Substitutes:

Similar


STMicroelectronics
In Stock: 822
Unit Price: £1.69000
Datasheet

Similar


Toshiba Semiconductor and Storage
In Stock: 27
Unit Price: £2.61000
Datasheet
N-Channel 600 V 11A (Tc) 208W (Tc) Through Hole TO-251A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AOI11S60

DigiKey Part Number
AOI11S60-ND
Manufacturer
Manufacturer Product Number
AOI11S60
Description
MOSFET N-CH 600V 11A TO251A
Customer Reference
Detailed Description
N-Channel 600 V 11A (Tc) 208W (Tc) Through Hole TO-251A
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
545 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-251A
Package / Case
Base Product Number
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

Obsolete
This product is no longer manufactured. View Substitutes