EPC2071 GaN FET

EPC's EPC2071 is 100 V, 2.2 mΩ, 350 A pulsed current GaN FET that offers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48 V to 54 V input DC/DC for servers and artificial intelligence. Lower gate charges, QGD, and zero reverse recovery losses enable high-frequency operations of 1 MHz and beyond and high efficiency in a tiny 10.2 mm² footprint for state-of-the-art power density.

The EPC2071 is also ideal for BLDC motor drives, including e-bikes, e-scooters, robots, drones, and power tools. The EPC2071 is 1/3 the size of a silicon MOSFET with the same R_DS(ON), QG is 1/4 the size of the MOSFET, and the dead time can be reduced from 500 ns to 20 ns to optimize motor plus inverter efficiency and reduce acoustic noise.