Name: XPW6R30ANB,L1XHQ
Brand: Toshiba Semiconductor and Storage
SKU: 264-XPW6R30ANBL1XHQTR-ND
Price: 2.508 GBP
Availability: InStock

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XPW6R30ANB,L1XHQ
cms-digikey-product-number	264-XPW6R30ANBL1XHQTR-ND - Tape & Reel (TR) 264-XPW6R30ANBL1XHQCT-ND - Cut Tape (CT) 264-XPW6R30ANBL1XHQDKR-ND - Digi-Reel®
cms-manufacturer	Toshiba Semiconductor and Storage
cms-manufacturer-product-number	XPW6R30ANB,L1XHQ
cms-description	MOSFET N-CH 100V 45A 8DSOP
cms-standard-lead-time	32 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 100 V 45A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-DSOP Advance
Datasheet	Datasheet
cms-eda-cad-models	XPW6R30ANB,L1XHQ Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Operating Temperature	175°C
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerVDFN
Base Product Number	XPW6R30