Toshiba Semiconductor and Storage Single FETs, MOSFETs

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of 1,161

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
T2N7002AK,LM MOSFET N-CH 60V 200MA SOT23 Toshiba Semiconductor and Storage	63,044 In Stock	1 : £0.10000 Cut Tape (CT) 3,000 : £0.01952 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 4.5 V	±20V	17 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
T2N7002BK,LM MOSFET N-CH 60V 400MA SOT23-3 Toshiba Semiconductor and Storage	165,848 In Stock	1 : £0.11000 Cut Tape (CT) 3,000 : £0.02099 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSM3K72KFS,LF MOSFET N-CH 60V 300MA SSM Toshiba Semiconductor and Storage	113,213 In Stock	1 : £0.13000 Cut Tape (CT) 3,000 : £0.02663 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	150mW (Ta)	150°C	-	-	Surface Mount	SSM	SC-75, SOT-416
SSM3K37FS,LF MOSFET N-CH 20V 200MA SSM Toshiba Semiconductor and Storage	34,534 In Stock	1 : £0.15000 Cut Tape (CT) 3,000 : £0.02934 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.5V, 4.5V	2.2Ohm @ 100mA, 4.5V	1V @ 1mA	-	±10V	12 pF @ 10 V	-	100mW (Ta)	150°C (TA)	-	-	Surface Mount	SSM	SC-75, SOT-416
SSM3K72KCT,L3F MOSFET N-CH 60V 400MA CST3 Toshiba Semiconductor and Storage	28,081 In Stock	1 : £0.16000 Cut Tape (CT) 10,000 : £0.02534 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	CST3	SC-101, SOT-883
SSM3K56FS,LF MOSFET N-CH 20V 800MA SSM Toshiba Semiconductor and Storage	4,059,914 In Stock	1 : £0.24000 Cut Tape (CT) 3,000 : £0.04930 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	SSM	SC-75, SOT-416
SSM3J56MFV,L3F MOSFET P-CH 20V 800MA VESM Toshiba Semiconductor and Storage	153,933 In Stock	1 : £0.28000 Cut Tape (CT) 8,000 : £0.04984 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.2V, 4.5V	390mOhm @ 800mA, 4.5V	-	-	±8V	100 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VESM	SOT-723
SSM3J332R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	69,719 In Stock	1 : £0.28000 Cut Tape (CT) 3,000 : £0.05743 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	±12V	560 pF @ 15 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K56MFV,L3F MOSFET N-CH 20V 800MA VESM Toshiba Semiconductor and Storage	12,300 In Stock	1 : £0.28000 Cut Tape (CT) 8,000 : £0.04984 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	800mA (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	VESM	SOT-723
SSM3K339R,LF MOSFET N-CH 40V 2A SOT-23F Toshiba Semiconductor and Storage	3,679 In Stock	1 : £0.28000 Cut Tape (CT) 3,000 : £0.05743 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	2A (Ta)	1.8V, 8V	185mOhm @ 1A, 8V	1.2V @ 1mA	1.1 nC @ 4.2 V	±12V	130 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K56ACT,L3F MOSFET N-CH 20V 1.4A CST3 Toshiba Semiconductor and Storage	6,943 In Stock	1 : £0.28000 Cut Tape (CT) 10,000 : £0.05034 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.4A (Ta)	1.5V, 4.5V	235mOhm @ 800mA, 4.5V	1V @ 1mA	1 nC @ 4.5 V	±8V	55 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	CST3	SC-101, SOT-883
SSM3J356R,LF MOSFET P-CH 60V 2A SOT-23F Toshiba Semiconductor and Storage	86,452 In Stock	1 : £0.31000 Cut Tape (CT) 3,000 : £0.06642 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	8.3 nC @ 10 V	+10V, -20V	330 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J328R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	6,787 In Stock	1 : £0.31000 Cut Tape (CT) 3,000 : £0.06848 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J338R,LF MOSFET P-CH 12V 6A SOT23F Toshiba Semiconductor and Storage	123,931 In Stock	1 : £0.37000 Cut Tape (CT) 3,000 : £0.07947 Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Ta)	1.8V, 8V	17.6mOhm @ 6A, 8V	1V @ 1mA	19.5 nC @ 4.5 V	±10V	1400 pF @ 6 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J351R,LF MOSFET P-CH 60V 3.5A SOT-23F Toshiba Semiconductor and Storage	16,429 In Stock	1 : £0.41000 Cut Tape (CT) 3,000 : £0.09002 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.5A (Ta)	4V, 10V	134mOhm @ 1A, 10V	2V @ 1mA	15.1 nC @ 10 V	+10V, -20V	660 pF @ 10 V	-	2W (Ta)	150°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J133TU,LF MOSFET P-CH 20V 5.5A UFM Toshiba Semiconductor and Storage	58,837 In Stock	1 : £0.43000 Cut Tape (CT) 3,000 : £0.09521 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5.5A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM6J501NU,LF MOSFET P-CH 20V 10A 6UDFNB Toshiba Semiconductor and Storage	113,694 In Stock	1 : £0.46000 Cut Tape (CT) 3,000 : £0.10137 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.5V, 4.5V	15.3mOhm @ 4A, 4.5V	1V @ 1mA	29.9 nC @ 4.5 V	±8V	2600 pF @ 10 V	-	1W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K341TU,LF MOSFET N-CH 60V 6A UFM Toshiba Semiconductor and Storage	1,379 In Stock	1 : £0.52000 Cut Tape (CT) 3,000 : £0.11547 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.8W (Ta)	175°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
SSM3K341R,LF MOSFET N-CH 60V 6A SOT-23F Toshiba Semiconductor and Storage	171,802 In Stock	1 : £0.52000 Cut Tape (CT) 3,000 : £0.11746 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM6K361NU,LF MOSFET N-CH 100V 3.5A 6UDFNB Toshiba Semiconductor and Storage	26,291 In Stock	1 : £0.52000 Cut Tape (CT) 3,000 : £0.11746 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	±20V	430 pF @ 15 V	-	1.25W (Ta)	150°C	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K2615R,LF MOSFET N-CH 60V 2A SOT23F Toshiba Semiconductor and Storage	57,899 In Stock	1 : £0.53000 Cut Tape (CT) 3,000 : £0.12043 Tape & Reel (TR)	π-MOSV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	3.3V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	-	±20V	150 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM6J507NU,LF MOSFET P-CH 30V 10A 6UDFNB Toshiba Semiconductor and Storage	28,365 In Stock	1 : £0.53000 Cut Tape (CT) 3,000 : £0.12043 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	10A (Ta)	4V, 10V	20mOhm @ 4A, 10V	2.2V @ 250µA	20.4 nC @ 4.5 V	+20V, -25V	1150 pF @ 15 V	-	1.25W (Ta)	150°C (TJ)	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM6K341NU,LF MOSFET N-CH 60V 6A 6UDFNB Toshiba Semiconductor and Storage	13,727 In Stock	1 : £0.53000 Cut Tape (CT) 3,000 : £0.12043 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 4A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	2.5W (Ta)	150°C	-	-	Surface Mount	6-UDFNB (2x2)	6-WDFN Exposed Pad
SSM3K361R,LF MOSFET N-CH 100V 3.5A SOT-23F Toshiba Semiconductor and Storage	6,507 In Stock	1 : £0.57000 Cut Tape (CT) 3,000 : £0.13025 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	2.5V @ 100µA	3.2 nC @ 4.5 V	±20V	430 pF @ 15 V	-	1.2W (Ta)	175°C	-	-	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3K341R,LXHF AECQ MOSFET NCH 60V 6A SOT23F Toshiba Semiconductor and Storage	31,795 In Stock	1 : £0.73000 Cut Tape (CT) 3,000 : £0.17118 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	2.5V @ 100µA	9.3 nC @ 10 V	±20V	550 pF @ 10 V	-	1.2W (Ta)	175°C	Automotive	AEC-Q101	Surface Mount	SOT-23F	SOT-23-3 Flat Leads

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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