TSM80N1R2CH C5G Taiwan Semiconductor Corporation | Single FETs, MOSFETs

TSM80N1R2CH C5G is Obsolete and no longer manufactured.

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TSM80N1R2CH C5G
DigiKey Part Number	TSM80N1R2CHC5G-ND
Manufacturer	Taiwan Semiconductor Corporation
Manufacturer Product Number	TSM80N1R2CH C5G
Description	MOSFET N-CH 800V 5.5A TO251
Customer Reference
Detailed Description	N-Channel 800 V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
EDA/CAD Models	TSM80N1R2CH C5G Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	685 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number	TSM80