TO-251-3 Short Leads, IPAK, TO-251AA Single FETs, MOSFETs

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of 881

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRLU024NPBF MOSFET N-CH 55V 17A IPAK Infineon Technologies	34,525 In Stock	1 : £1.32000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	4V, 10V	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	480 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
STD12NF06L-1 MOSFET N-CH 60V 12A IPAK STMicroelectronics	4,775 In Stock	1 : £1.19000 Tube	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	12A (Tc)	5V, 10V	100mOhm @ 6A, 10V	2V @ 250µA	10 nC @ 5 V	±16V	350 pF @ 25 V	-	42.8W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
STD1NK60-1 MOSFET N-CH 600V 1A IPAK STMicroelectronics	740 In Stock	1 : £1.30000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1A (Tc)	10V	8.5Ohm @ 500mA, 10V	3.7V @ 250µA	10 nC @ 10 V	±30V	156 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
IRLU3410PBF MOSFET N-CH 100V 17A IPAK Infineon Technologies	5,406 In Stock	1 : £1.49000 Tube	HEXFET®	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	4V, 10V	105mOhm @ 10A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	800 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU014PBF MOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix	1,892 In Stock	1 : £1.54000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	10V	200mOhm @ 4.6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRLU110PBF MOSFET N-CH 100V 4.3A TO251AA Vishay Siliconix	4,791 In Stock	1 : £1.62000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.3A (Tc)	4V, 5V	540mOhm @ 2.6A, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU120PBF MOSFET N-CH 100V 7.7A TO251AA Vishay Siliconix	2,630 In Stock	1 : £1.64000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.7A (Tc)	10V	270mOhm @ 4.6A, 10V	4V @ 250µA	16 nC @ 10 V	±20V	360 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU9014PBF MOSFET P-CH 60V 5.1A TO251AA Vishay Siliconix	2,101 In Stock	1 : £1.64000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	5.1A (Tc)	10V	500mOhm @ 3.1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
STU6NF10 MOSFET N-CH 100V 6A IPAK STMicroelectronics	2,992 In Stock	1 : £1.66000 Tube	STripFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6A (Tc)	10V	250mOhm @ 3A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	280 pF @ 25 V	-	30W (Tc)	-65°C ~ 175°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU9310PBF MOSFET P-CH 400V 1.8A TO251AA Vishay Siliconix	208 In Stock	1 : £1.83000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	400 V	1.8A (Tc)	10V	7Ohm @ 1.1A, 10V	4V @ 250µA	13 nC @ 10 V	±20V	270 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRLU014PBF MOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix	2,094 In Stock	1 : £1.89000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	7.7A (Tc)	4V, 5V	200mOhm @ 4.6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU5305PBF MOSFET P-CH 55V 31A IPAK Infineon Technologies	8,256 In Stock	1 : £1.95000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	31A (Tc)	10V	65mOhm @ 16A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1200 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU9024NPBF MOSFET P-CH 55V 11A IPAK Infineon Technologies	6,325 In Stock	1 : £1.96000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	11A (Tc)	10V	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	38W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU024PBF MOSFET N-CH 60V 14A TO251AA Vishay Siliconix	4,118 In Stock	1 : £1.98000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	14A (Tc)	10V	100mOhm @ 8.4A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	640 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU9024PBF MOSFET P-CH 60V 8.8A TO251AA Vishay Siliconix	1,838 In Stock	1 : £2.09000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	8.8A (Tc)	10V	280mOhm @ 5.3A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	570 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU3607PBF MOSFET N-CH 75V 56A IPAK Infineon Technologies	2,699 In Stock	1 : £2.14000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	56A (Tc)	10V	9mOhm @ 46A, 10V	4V @ 100µA	84 nC @ 10 V	±20V	3070 pF @ 50 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
SIHFU310-GE3 MOSFET N-CHANNEL 400V Vishay Siliconix	2,311 In Stock	1 : £0.85000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.6Ohm @ 1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IPU80R4K5P7AKMA1 MOSFET N-CH 800V 1.5A TO251-3 Infineon Technologies	1,514 In Stock	1 : £1.00000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	1.5A (Tc)	10V	4.5Ohm @ 400mA, 10V	3.5V @ 200µA	4 nC @ 10 V	±20V	250 pF @ 500 V	-	13W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3-21	TO-251-3 Short Leads, IPAK, TO-251AA
TSM2NB60CH C5G MOSFET N-CHANNEL 600V 2A TO251 Taiwan Semiconductor Corporation	9,987 In Stock	1 : £1.06000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2A (Tc)	10V	4.4Ohm @ 1A, 10V	4.5V @ 250µA	9.4 nC @ 10 V	±30V	249 pF @ 25 V	-	44W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
SIHFU9220-GE3 MOSFET P-CH 200V 3.6A TO251AA Vishay Siliconix	3,033 In Stock	1 : £1.15000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	3400 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
IPU80R2K0P7AKMA1 MOSFET N-CH 800V 3A TO251-3 Infineon Technologies	1,527 In Stock	1 : £1.21000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	3A (Tc)	10V	2Ohm @ 940mA, 10V	3.5V @ 50µA	9 nC @ 10 V	±20V	175 pF @ 500 V	-	24W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
STD2NC45-1 MOSFET N-CH 450V 1.5A IPAK STMicroelectronics	609 In Stock	1 : £1.29000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	1.5A (Tc)	10V	4.5Ohm @ 500mA, 10V	3.7V @ 250µA	7 nC @ 10 V	±30V	160 pF @ 25 V	-	30W (Tc)	-65°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
STU3LN80K5 MOSFET N-CHANNEL 800V 2A IPAK STMicroelectronics	2,948 In Stock	1 : £1.38000 Tube	MDmesh™ K5	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	2A (Tc)	10V	3.25Ohm @ 1A, 10V	5V @ 100µA	2.63 nC @ 10 V	±30V	102 pF @ 100 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU210PBF MOSFET N-CH 200V 2.6A TO251AA Vishay Siliconix	6,240 In Stock	1 : £1.54000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	2.6A (Tc)	10V	1.5Ohm @ 1.6A, 10V	4V @ 250µA	8.2 nC @ 10 V	±20V	140 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
STU2NK100Z MOSFET N-CH 1000V 1.85A IPAK STMicroelectronics	938 In Stock	1 : £1.59000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	1.85A (Tc)	10V	8.5Ohm @ 900mA, 10V	4.5V @ 50µA	16 nC @ 10 V	±30V	499 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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