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IPU80R2K8CEBKMA1 | |
|---|---|
cms-digikey-product-number | IPU80R2K8CEBKMA1-ND |
cms-manufacturer | |
cms-manufacturer-product-number | IPU80R2K8CEBKMA1 |
cms-description | MOSFET N-CH 800V 1.9A TO251-3 |
cms-customer-reference | |
cms-detailed-description | N-Channel 800 V 1.9A (Tc) 42W (Tc) Through Hole PG-TO251-3 |
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cms-category | Vgs(th) (Max) @ Id 3.9V @ 120µA |
Mfr | Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
Series | Vgs (Max) ±20V |
Packaging Tube | Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V |
Part Status Discontinued at DigiKey | Power Dissipation (Max) 42W (Tc) |
FET Type | Operating Temperature -55°C ~ 150°C (TJ) |
Technology | Mounting Type Through Hole |
Drain to Source Voltage (Vdss) 800 V | Supplier Device Package PG-TO251-3 |
Current - Continuous Drain (Id) @ 25°C | Package / Case |
Drive Voltage (Max Rds On, Min Rds On) 10V | Base Product Number |
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.1A, 10V |
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