Name: IMBG65R163M1HXTMA1
Brand: Infineon Technologies
SKU: 448-IMBG65R163M1HXTMA1TR-ND
Price: 4.464 GBP
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMBG65R163M1HXTMA1
DigiKey Part Number	448-IMBG65R163M1HXTMA1TR-ND - Tape & Reel (TR) 448-IMBG65R163M1HXTMA1CT-ND - Cut Tape (CT) 448-IMBG65R163M1HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMBG65R163M1HXTMA1
Description	SILICON CARBIDE MOSFET PG-TO263-
Manufacturer Standard Lead Time	23 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 17A (Tc) 85W (Tc) Surface Mount PG-TO263-7-12
Datasheet	Datasheet
EDA/CAD Models	IMBG65R163M1HXTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSIC™ M1
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	217mOhm @ 5.7A, 18V
Vgs(th) (Max) @ Id	5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 18 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	320 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	85W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	IMBG65R