EPC2216 Enhancement Mode Power Transistor

EPC's EPC2216 is an automotive 15 V, 28 A enhancement-mode GaN power transistor

Image of EPC's EPC2216 Enhancement Mode Power Transistor  EPC's gallium nitrides (GaN) transistors have exceptionally high electron mobility and low-temperature coefficient, allowing very low RDS(on). Their lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The result is a device that can handle tasks where very high switching frequency and low on-time are beneficial as well as those where on-state losses dominate.

Features and Benefits
  • Ultra-high efficiency
  • Ultra-low RDS(on)
  • Ultra-low QG
  • Ultra-small footprint
  • High-speed DC-DC conversions
  • LIDAR/pulsed power applications
  • LIDAR for augmented reality applications

EPC2216 Enhancement Mode Power Transistor

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
AEC-Q101 GAN FET 15 VEPC2216AEC-Q101 GAN FET 15 V22235 - ImmediateView Details
Published: 2019-10-18