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EPC2051 100 V eGaN® Power Transistor

EPC’s EPC2051 is 30 times smaller than comparable silicon and is capable of 97% efficiency at 500 kHz

Image of EPC's EPC2051 100 V eGaN Power TransistorEPC’s EPC2051 100 V eGaN power transistor has a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high-efficiency power conversion in a tiny 1.1 mm2 footprint.

Despite the small footprint, the EPC2051 achieves 97% efficiency at a 4 A output while switching at 500 kHz while operating in a 50 V to 12 V buck converter. In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48 V input power converters for computing and telecom systems, LiDAR, LED lighting, and Class-D audio.

Features Applications
  • High efficiency
    • 97% efficiency at 500 kHz in DC/DC conversion
  • Small footprint
    • Low inductance, extremely small, 1.30 mm x 0.85 mm BGA surface-mount passivated die
  • DC/DC power conversion
  • LiDAR
  • LED lighting
  • Class-D audio

EPC2051 100 V eGaN® Power Transistor

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
GANFET TRANS 100V DIE CU PILLAREPC2051GANFET TRANS 100V DIE CU PILLAR2204 - ImmediateView Details

Evaluation Board

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
BOARD DEV EPC2051 100V EGAN FETEPC9091BOARD DEV EPC2051 100V EGAN FET27 - ImmediateView Details
Published: 2018-09-07