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100 V eGaN FET family for best-in-class 48 V DC/DC

More Efficient • Smaller • Lower Cost

 

48 V = GaN: In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices.

Part Number Configuration VDS Max RDS(ON) (mΩ) (VGS=5V) QG typ (nC) QGS typ (nC) QGD typ (nC) QOSS typ (nC) Max. Peak Pulsed ID(A) (s5°C, Tpulse = 300µs) Package (mm) Half-Bridge Development Board 48 V Reference Design How2AppNote
EPC2053 Single 100 3.8 12 4.1 1.5 45 246 BGA 3.5 x 2 EPC9093 EPC9138 48 V - 6 V, 900 W LLC
48 V - 12 V, 900 W LLC
EPC2045 Single 100 7 5.9 1.9 0.8 25 130 BGA 2.5 x 1.5 EPC9078 EPC9141 48 V - 12 V, 60 A Multi-Phase
EPC9205 EPC9130 48 V to 5 - 12 V DC/DC
EPC2052 Single 100 13.5 3.6 1.5 0.5 13 74 BGA 1.5 x 1.5 EPC9092    
EPC2051 Single 100 25 1.7 0.6 0.3 7.3 37 BGA 0.85 x 1.3 EPC9091