N-Channel 650 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
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SIHF12N65E-GE3

DigiKey Part Number
SIHF12N65E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHF12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHF12
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In-Stock: 870
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Quantity
All prices are in GBP
Tube
QuantityUnit PriceExt Price
1£2.45000£2.45
50£1.22500£61.25
100£1.10640£110.64
500£0.89858£449.29
1,000£0.83177£831.77
2,000£0.77562£1,551.24
5,000£0.77127£3,856.35
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:£2.45000
Unit Price with VAT:£2.94000