NGW30T60M3DFQ 600 V Insulated Gate Bipolar Transistors

Nexperia’s discrete IGBTs (insulated gate bipolar transistors) are a staple component of medium and high-voltage applications. With a growing demand for robust, efficient, and cost-effective power solutions across an increasing range of applications, Nexperia’s carrier-stored trench-gate advanced field-stop (FS) IGBT portfolio meets these industry demands.

Initially consisting of 600 V devices, Nexperia IGBTs deliver high ruggedness reliability and enhanced inverter power density for industrial applications. That is ideal for more traditional power applications such as heating, ventilation, and air conditioning (HVAC) systems as well as electric welding and induction heating for power conversion and motor drives in current systems, including renewable energy [photovoltaic (PV) strings, heat pumps], EV chargers, and 5 kW to 20 kW (20 kHz) industrial servo motors for robotics.