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Cascode GaN FETs

Nexperia GaN FETs offer performance, efficiency, and reliability of power systems

Image of Nexperia’s Cascode GaN FETsNexperia cascode GaN FETs offer high power density, performance, and switching frequency. The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability, which are vital in next-generation power systems, such as Industry 4.0 and renewable energy applications. The unique cascode GaN FET solution facilitates easy driving of devices using well-known Si MOSFET gate drivers. They deliver unmatched high junction temperature [Tj (max) = +175°C], design freedom, and improved reliability of power systems.

Cascode GaN FETs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
GAN041-650WSB/SOT429/TO-247GAN041-650WSBQGAN041-650WSB/SOT429/TO-247304 - Immediate$12.99View Details
GANFET N-CH 650V 34.5A TO247-3GAN063-650WSAQGANFET N-CH 650V 34.5A TO247-3536 - Immediate$20.96View Details
650 V, 33 MOHM GALLIUM NITRIDE (GAN039-650NBBHP650 V, 33 MOHM GALLIUM NITRIDE (847 - Immediate$13.19View Details
GAN111-650WSB/SOT429/TO-247GAN111-650WSBQGAN111-650WSB/SOT429/TO-247151 - Immediate$10.35View Details
650 V, 33 MOHM GALLIUM NITRIDE (GAN039-650NTBZ650 V, 33 MOHM GALLIUM NITRIDE (0 - Immediate$8.89View Details
GAN CASCODE FETSGAN039-650NTBJGAN CASCODE FETS727 - Immediate$13.19View Details
Published: 2024-09-04

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