Split-Gate Technology MOSFETs
MCC’s split-gate technology MOSFETs are suitable for space-saving and high-efficiency requirements in applications
Micro Commercial Components' split-gate technology MOSFETs offer extremely low RDS(on) value and allow higher current density in smaller packages. This makes them suitable for space-saving and high-efficiency requirements in applications.
- Increases BVDSS
- Higher N-doping in the drift region minimizes RDS(on)
- Decreases QGD that reduces Miller charge coupling
- Improved FOM reduces switching and conduction losses
- Current SGT portfolio offering ranges from 30 V to 150 V rating and 1.5 mΩ lowest RDS(on) value in common packages
- Wide range of LV MOSFET portfolio
- Low RSP value (specific on-state resistance)
- High efficiency
- High quality
- Fast delivery




