MCG052P10Y-TP/MCAC054P10Y-TP P-Channel MOSFETs in DFN3333 and DFN5060 Packaging

Product Highlights > MCG052P10Y-TP/MCAC054P10Y-TP P-Channel MOSFETs in DFN3333 and DFN5060 Packaging

            MCG052P10Y-TP/MCAC054P10Y-TP P-Channel MOSFETs in DFN3333 and DFN5060 Packaging
                    MCC P-channel MOSFETs are designed with a 100 V drain-source voltage (VDS), making them ideally suited for high-voltage applications
    

Image of Micro Commercial Components MCG052P10Y-TP/MCAC054P10Y-TP P-Channel MOSFETs in DFN3333 and DFN5060 packaging Micro Commercial Components (MCC) high-performance P-channel MOSFETs are designed to simplify high-side switch designs, featuring the compact DFN333-packaged MCG052P10Y-TP and the DFN5060-packaged MCAC054P10Y-TP. These devices provide efficient power management by combining low R_DS(ON)with robust continuous current ratings. The MCG052P10Y-TP features a 52 mΩ on-resistance with a 16 A continuous current rating, while the MCAC054P10Y-TP offers 54 mΩ on-resistance with a 16 A continuous rating with a higher 25 A continuous current rating. Both MOSFETs utilize split-gate trench technology, ensuring superior stability, low on-resistance, and high-efficiency performance for demanding applications.

Features

Low R_DS(ON)of 52 mΩ (max) and 54 mΩ (max) at VGS = 10 V, minimizing conduction losses and improving overall system efficiency
Split gate trench MOSFET technology optimized for low switching losses and higher efficiencies
100 V V_DS is ideally suited for high-voltage applications
Lower thermal resistance of +5°C/W and +1.86°C/W junction-to-case allows efficient transfer of heat to the PCB, enabling stable operation at high power levels without immediate thermal shutdown
RoHS and halogen-free, aligning with global environmental standards and green manufacturing initiatives

Applications

Power distribution and load-switching servers, storage systems, and networking equipment
BMS
DC/DC converters
Professional audio amplifiers
Industrial motor drives and solenoid control