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FDMS86350 - 80 V N-Channel PowerTrench® MOSFET
onsemi's N-channel MOSFETs minimize on-state resistance and maintain superior switching performance
onsemi N-channel MOSFET is produced using onsemi's advanced Power Trench process that has been especially tailored to minimize on-state resistance, yet maintain superior switching performance.
Features
- Max RDS(ON) = 2.4 mΩ at VGS = 10 V, ID = 25 A
- Max RDS(ON) = 3.2 mΩ at VGS = 8 V, ID = 22 A
- Advanced package and silicon combination for low RDS(ON) and high-efficiency
80 V N-Channel PowerTrench® MOSFET
| Image | Manufacturer Part Number | Description | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Available Quantity | Price | ||
|---|---|---|---|---|---|---|---|---|
 |  | FDMS86350 | MOSFET N-CH 80V 25A/130A POWER56 | 80 V | 25A (Ta), 130A (Tc) | 1157 - Immediate | $3.83 | View Details |
Published: 2013-07-19
