USB-C Adapters and Chargers

From ultra-high power density and ultimate efficiency to outstanding price/performance

To satisfy the ever-increasing demand for higher efficiency and smaller power supplies, Infineon offers a broad variety of products meeting different requirements.

  • Controllers
  • High-voltage Switches (GaN)
  • High-voltage Switches (Si)
  • Rectification & Load Switches
  • Why Infineon

Primary-side Controllers

Digital hybrid flyback controller - XDPS2201

XDPS2201 is a digital controller based on an asymmetric half-bridge flyback topology. It combines the simplicity of a traditional flyback with the performance of a resonant converter. Such a combination allows natural soft-switching to reduce switching losses enabling high switching frequency designs.

Key Features

  • Supporting wide AC line input voltage range
  • Low switching losses with zero voltage and current switching across all AC line input and load conditions
  • High efficiency with multi-mode operation (active burst mode, DCM, ZV-RVS and CRM)
  • Integrated high-side driver
  • Snubberless design
  • Single auxiliary transformer winding and resonant cap output to support wide output voltage range

Your Benefits

  • High efficiency of >93% and low standby power to meet international efficiency regulatory standards
  • Ultrahigh power density
  • Low BOM cost and count with highly integrated controller
  • Simplified transformer design to support wide output voltage range
  • Ease of configurable design with GUI tools

Design Guide: XDPS2201
Video: XDPS2201 for Charger Design
Video: USB-C Fast Charging Solutions

Ultra-high density 65 W USB-PD/PPS demo design with XDPS2201

The DEMO_XDPS2201_65W1 is a 65 W USB-PD type C PPS charger demo board that uses Infineon XDPS2201 together with two CoolMOS™ superjunction MOSFETs in a half-bridge configuration. It demonstrates high power density and high efficiency with both fixed and PPS output in an ultra-compact form factor supporting up to 65 W.

Summary of Features

  • High power density PCBA design of 31 W/in3
  • Peak efficiency of 93.8%
  • Wide input voltage 90~264 VAC
  • Fixed output: 5 V/3 A, 9 V/3 A, 12 V/3 A, 15 V/3 A, 20 V/3.25 A
  • PPS output: 5~20 V / 3 A

Benefits

  • Ease-of-customization with compact form factor design
  • Reduced BOM count and cost
  • High efficiency and low standby power consumption to meet international regulatory requirements

Application Note: DEMO_XDPS2201_65W1
Video: XDPS2201 for Charger Design
Video: USB-C Fast Charging Solutions

Primary start-up controller – EZ-PD™ PAG1P

EZ-PD™ PAG1P is a primary start-up controller designed to work with EZ-PD™ PAG1S in a secondary-controlled AC/DC flyback convertor topology where the voltage and current regulation is performed by EZ-PD™ PAG1S, and EZ-PD™ PAG1P provides the start-up function, drives the primary FET, and responds to the fault condition. It also supports X-cap discharge mode for better efficiency.

Features

  • Works across universal AC main input 85 VAC to 265 VAC
  • Synchronizes to PWM from the secondary side using a pulse edge transformer
  • Integrated low-side gate driver to drive primary side FET
  • Integrated high-voltage start-up and shunt regulator
  • Supports X-cap discharge mode for enhanced efficiency
  • Integrated line UV, OCP, and secondary OVP
  • Fixed auto-restart timer for fault recovery
  • Programmable soft-start configurable with an external capacitor

Online Training: Introducing the highly integrated USB-C power adapter solution EZ-PD™ PAG1

PD controller – EZ-PD™ CCG3PA

The EZ-PD™ CCG3PA is a highly integrated USB Type-C port controller which allows to customize the protocol functionality via a software and offers highest flexibility thanks to a 64kB flash memory. Furthermore, it comes with an integrated PFET gate driver.

Features

  • Supports one USB type-C port and one type-A port
  • Supports USB Power Delivery 3.0 PPS
  • Supports the legacy protocols including Qualcomm QC4.0, Apple charging 2.4 A, AFC, BC 1.2 at no additional BOM cost
  • Programmable USB-C controller offering the flexibility to implement custom features and upgrade the firmware on the field
  • Integrates voltage regulation and current sense amplifier
  • Integrates 30 V-tolerant regulator
  • On-chip OVP, OCP, UVP, SCP, and VBUS to CC short protection
  • Integrates a PFET VBUS gate driver
  • Integrated system-level ESD on VBUS, CC, and DP/DM
  • Packages: 24-pin QFN and 16-pin SOIC
  • Supports extended industrial temperature range (-40 °C to +105 °C)

Application Note: Hardware Design Guidelines for EZ-PD™ CCG3PA in Power Adapter Applications

PD controller – EZ-PD™ CCG3PA-NFET

The EZ-PD™ CCG3PA-NFET is a highly integrated USB Type-C port controller which allows to customize the protocol functionality via a software and offers highest flexibility thanks to a 64kB flash memory. Furthermore, it comes with an integrated NFET gate driver.

Features

  • Supports one USB Type-C port
  • Supports USB Power Delivery 3.0 PPS
  • Supports the legacy protocols including Qualcomm QC4.0, Apple charging 2.4A, AFC, BC 1.2 at no additional BOM cost
  • Independent CC-CV loop
  • Integrates VBUS NFET gate driver
  • Programmable USB-C controller offering the flexibility to implement custom features and upgrade the firmware on the field
  • On-chip OVP, OCP, UVP, SCP, and VBUS to CC Short protection
  • Available in 24-pin QFN

Secondary-side Controllers

PD + SR controller – EZ-PD™ PAG1S

EZ-PD™ PAG1S is a single-chip, secondary-side controller that integrates the synchronous rectification driver, PD controller, and a wide range of protection circuits. The controller is designed to support a traditional primary-controlled flyback architecture, as well as a more efficient secondary-controlled flyback architecture with a simple primary start-up controller.

Features

  • Works with both primary-side and secondary-side controlled flyback designs
  • Integrates secondary-side regulation, synchronous rectifier (SR), and charging port controller
  • Supports quasi-resonant (QR) or critical conduction mode (CrCM), valley switching, discontinous conduction mode (DCM), and burst mode for light load operations
  • Switching frequency range of 20 kHZ to 150 kHZ
  • Higher efficiency across line and load levels with independent CC/CV loop control
  • Supports USB PD 3.0 with PPS (USB-IF certified, TID:1475), QC4+
  • Supports legacy charging protocols: BC v1.2, AFC, and Apple charging
  • Integrates low-side current sense amplifier and VBUS NFET gate drivers
  • Available in a VQFN-24 (4x4) package

Online Training: Introducing the highly integrated USB-C power adapter solution EZ-PD™ PAG1

Multi-port Controllers

PD + DCDC controller - EZ-PD™ CCG7DC

The EZ-PD™ CCG7DC is a highly integrated dual-port USB type-C power delivery solution with integrated buck-boost controllers, perfect for multi-port AC-DC chargers/adapters and cigarette lighter adapters.

Features

  • 2 USB-C PD controllers + 2 DC-DC controllers in one single chip
  • DC-DC controller
    • configurable switching frequency of 150 kHZ/600 kHZ
    • input voltage range of 4-24 V (40 V tolerant)
    • programmable spread spectrum frequency
  • Arm® Cortex®-M0 with Flash
  • Integrated VBUS NFET gate drivers, buck-boost NFET gate drivers, VCONN FETs and high-side current sense amplifier (HSCSA)
  • Protection features: OVP, UVP, SCP, OCP, OTP and VBUS-CC
  • Supports latest USB-C PD v3.0 with PPS, QC4+, QC4.0, Samsung AFC, Apple 2.4 A, BCv1.2
  • Advanced features:
    • dynamic load sharing
    • signed field firmware upgrade
    • optimized buck input voltage

Product Brief: EZ-PD™ CCG7DC Two-port USB-C PD + DC-DC controller

High-voltage Switches (GaN)

CoolGaN™ GIT HEMTs 600V

Infineon’s CoolGaN™ GIT HEMT is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e-mode concept to maturity with end-to-end production in high volumes. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.

In chargers and adapters, GaN HEMT transistors enable superior and highly efficient switching performance, and greatly help achieving high power density designs.

Key Features and Technical Benefits

  • High-speed switching
  • Outstanding dynamic on-state resistance
  • Low gate charge enabling turn-on with low current
  • Very low RDS(on) and large cost-down potential
  • Better efficiency in resonant circuits
  • New topologies and current modulation
  • Fast and (near-) lossless switching

White Paper: A full-GaN solution for high power density chargers and adapters

CoolGaN™ Integrated Power Stages (IPS) 600V

GaN technology with integrated drivers benefits systems looking to utilize faster switching frequency and a higher power density. For engineers, CoolGaN™ IPS means more energy-efficient systems owing to the superior energy transference over typical silicon substrates, increased design flexibility with enhanced PCB space utilization, and a faster time-to-market as the single GaN/Power IC offers simplified implementation.

Key Features and Technical Benefits

  • Digital-in, power-out building block
  • Application configurable switching behavior
  • Highly accurate and stable timing
  • Thermally enhanced 8 x 8 mm QFN-28 package
  • Easy to drive with 2x digital PWM Input
  • Configurability of gate path with low inductance loop on PCB
  • Allows short dead-time setting in order to maximize system efficiency
  • Small package for compact system designs

White Paper: CoolGaN™ IPS in high power density chargers and adapters

High-voltage Switches (Si)

Choosing the suitable high-voltage MOSFET is also a key to a high-efficiency design. Infineon’s CoolMOS™ PFD7 / P7 / C7 Superjunction MOSFET series offer cost-competitiveness with improved technology that reduces switching- and conduction losses. Also, an integrated gate-source Zener diode is featured for enhanced ESD protection and system reliability during operation. For more guidance on how to choose the right power switch, download the white paper.

White Paper: Recommendations and solutions for USB-C PD chargers

600 V CoolMOS™ PFD7

The latest 600 V CoolMOS™ PFD7 series sets a new benchmark in 600 V superjunction (SJ) technologies suitable for ultrahigh power density designs like chargers and adapters. This product family offers up to 1.17 % efficiency increase compared to the CoolMOS™ P7 technologies, which leads to a power density increase of 1.8 W. This outstanding improvement is achieved by lower conduction and charge/discharge losses, as well as reduced turn-off and gate-driving losses, enabled by pushing the cutting-edge CoolMOS™ technology to new limits.

Application Note: 600 V CoolMOS™ PFD7 - SJ MOSFET for high power density adapters and motor drives
Simulation Model: MOSFET CoolMOS™ PFD7 600V Spice

600 V CoolMOS™ P7

The 600 V CoolMOS™ P7 SJ MOSFET family is Infineon’s most well-balanced CoolMOS™ technology in terms of ease of use and excellent efficiency, available in various RDS(on) classes and different packages. Compared to its predecessors, it offers highest efficiency and improved power density due to the significantly reduced gate charge (QG) and switching losses (EOSS levels), as well as optimized on-state resistance (RDS(on)).

Application Note: 600 V CoolMOS™ P7 - Infineon’s most well-balanced high voltage MOSFET technology

700 V CoolMOS™ P7

The 700 V CoolMOS™ P7 offers a price competitive solution for consumer applications such as chargers and adapters in the power range from 10 W to 75 W. In other words, this product addresses the low-power SMPS market where it tackles common barriers through excellent performance and ease-of-use. The named power converters are typically based on flyback topologies. That is why the 700 V CoolMOS™ P7 is no longer a multi-purpose MOSFET, it is now a tailored technology optimized for flyback topologies.

In a SOT-223 package

The 700 V CoolMOS™ P7 is available in the cost-effective SOT-223 package, the perfect drop-in replacement as it fits to common DPAK properties (i.e. smaller footprint while DPAK pin-to-pin compatible) and reduces the overall bill of material (BOM). Improved form factors enable space savings without a significant disadvantage in thermals. The CoolMOS™ P7 in SOT-223 is Infineon’s contribution to the design of competitive products that match the increasing demand for compact, light and slim low power SMPS designs.

Application Note: 700 V CoolMOSTM P7 - First 700 V CoolMOS™ MOSFET developed on 300 mm for low power applications
Product Brief: CoolMOS™ P7 in SOT-223 package

650 V CoolMOS™ C7

The 650 V CoolMOS™ C7 superjunction MOSFET series are designed to achieve record level efficiency performance. They offer substantial efficiency benefits over the whole load range in hard-switching applications compared to previous series and competition. This is achieved by minimizing switching losses via ultralow levels of switching losses (EOSS) (approximately 50 percent reduction compared to the CoolMOS™ CP), reduced gate charge (QG), and a careful balance of other relevant product key parameters. The low EOSS and QG also enable operation at higher switching frequency and related size reduction of the circuit magnetics.

Application Note: CoolMOS™ C7 – Technology Description & Design Guide

OptiMOS™ Power MOSFETs

OptiMOS™ PD – Synchronous rectification and load switches (25V – 150V)

Tailor-made low-voltage MOSFETs in small packages

Key Features and Technical Benefits

  • Super-SO8 and PQFN 3.3x3.3 package
  • Logic level availability
  • Low RDS(on)
  • Low gate, output and reverse recovery charge
  • Superior thermal behavior
  • Excellent price-performance ratio
  • High efficiency and power density

Product Brief: OptiMOS™ PD The best fit for USB PD and fast charger designs

OptiMOS™ 6 – Synchronous rectification switches (40V)

Combining best-in-class RDS(on) with superior switching performance

Key Features and Technical Benefits

  • PQFN 3.3x3.3 package
  • Optimized for synchronous rectification
  • Very low RDS(on)
  • Excellent thermal resistance
  • Increased power density
  • Highest system efficiency
  • System cost reduction

Application Note: OptiMOS™ device selection for synchronous rectification

OptiMOS™ 5 – Load switches (25V – 30V)

Boosting system performance with best-in-class technology

Key Features and Technical Benefits

  • Best-in-class solution for efficiency in a small form factor
  • Industry’s lowest RDS(on) in smallest PQFN 2x2 package
  • Outstanding electrical performance
  • Highest performance and power density featuring
  • Reducing system costs
  • Enabling significant space saving
  • Easy to design with small footprint

Product Brief: OptiMOS™ 5 power MOSFETs 25 V and 30 V highperformance portfolio extension in PQFN 2x2

Why Infineon

Ease-of-use & Complexity Reduction

  • Ready-to-use reference designs
    A lineup of time-to-market shortening reference designs for different power ranges and form factor levels reduce design efforts and cost.
  • Complexity reduction
    A comprehensive offering of power and protocol controllers, high and low voltage switches and TVS diodes allow customers to source all components from one supplier.

High-efficiency Designs

  • High efficiency and power density designs
    Infineon’s solutions based on secondary-side controlled QR, Zero Voltage Switching (ZVS) control and hybrid flyback control enable smallest form factor designs with excellent efficiency levels.
  • High-efficiency switches
    Power switches with low RDS(on)  and low parasitic capacitances help to improve the system efficiency
  • High-performance packaging
    The Kelvin-source engaged ThinPAK and PQFN packages minimize power losses, reduce the PCB space, and improve thermal dissipation capabilities.

Differentiation

  • Programmable USB-C power delivery controllers
    Infineon‘s USB-C power delivery power controllers integrate either PFET or NFET gate driver for VBUS and are compatible with the latest USB-C power delivery standard. Full programmability as prerequisite for highest flexibility and shortest time to market while supporting custom protocol additions, legacy protocols, and protocol updates.
  • Configurability and upgradeability
    Infineon’s power controllers XDP™ and EZ-PD™ PAG1 offer the flexibility to fix an existing issue or upgrade the firmware via Flash or OTP during development, shortening time to market

Secured Supply Chain

  • Capacity and security of supply
    Infineon has the largest installed in-house power semiconductor capacity with 12” wafer production for discretes to ensure maximum security of supply.
  • Flexibility
    Infineon offers dedicated supply chain programs to secure capacity and enable flexibility to demand fluctuations.