EPC2111 30 V eGaN® Transistor Half-Bridge

EPC's EPC2111 enhancement-mode GaN power transistor half-bridge increases both efficiency and power density

Image of EPC's EPC2111 30 V eGaN® Transistor Half BridgeEPC’s 30 V eGaN half-bridge, EPC2111, integrates two eGaN power FETs into a single device increasing both efficiency and power density while reducing assembly costs to the end user’s power conversion systems. The EPC2111 comes in a chip-scale package for improved switching speed and thermal performance and is only 3.5 mm x 1.5 mm for increased power density. A primary application for this device is for notebook and tablet computing. The high-frequency capability of GaN reduces the size required for power conversion and thus will drive significant size reductions of next-generation mobile computing.

  • High-frequency capability
    • Monolithic integration eliminates interconnect inductances for higher efficiency at a higher frequency
  • High efficiency
    • Lower conduction and switching losses, zero reverse recovery losses
  • Small footprint
    • Low inductance, extremely small, 3.5 mm x 1.55 mm BGA surface-mount passivated die
  • High-frequency DC/DC power conversion
  • Notebook and tablet computing

EPC2111 30 V eGaN® Transistor Half-Bridge

ImageManufacturer Part NumberDescriptionDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsAvailable QuantityView Details
GAN TRANS ASYMMETRICAL HALF BRIDEPC2111GAN TRANS ASYMMETRICAL HALF BRID30V16A (Ta)19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V22241 - ImmediateView Details

Evaluation Boards

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
EVAL BOARD FOR EPC2111EPC9086EVAL BOARD FOR EPC211128 - ImmediateView Details
EVAL BOARD FOR EPC2111EPC9204EVAL BOARD FOR EPC211127 - ImmediateView Details
Published: 2019-08-16