


Type | Description | Select All |
|---|---|---|
Category | ||
Manufacturer | IXYS | |
Series | ||
Packaging | Tube | |
Part Status | Active | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 2 N-Channel (Dual) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 75A | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 4mA | |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Power - Max | - | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | i4-Pac™-5 | |
Supplier Device Package | ISOPLUS i4-PAC™ | |
Base Product Number |


