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Transistors - FETs, MOSFETs - Single

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BSZ097N10NS5
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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
Unit Price
GBP
Minimum Quantity Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
BSZ097N10NS5ATMA1 Datasheet BSZ097N10NS5ATMA1 - Infineon Technologies BSZ097N10NS5ATMA1TR-ND BSZ097N10NS5ATMA1 Infineon Technologies MOSFET N-CH 100V 8A/40A TSDSON 0 Available: 0 £0.79748 5,000 Minimum: 5,000 Tape & Reel (TR)
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 8A (Ta), 40A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V 3.8V @ 36µA 28nC @ 10V ±20V 2080pF @ 50V
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2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TSDSON-8-FL 8-PowerTDFN
BSZ097N10NS5ATMA1 Datasheet BSZ097N10NS5ATMA1 - Infineon Technologies BSZ097N10NS5ATMA1CT-ND BSZ097N10NS5ATMA1 Infineon Technologies MOSFET N-CH 100V 8A/40A TSDSON 2,976 - Immediate Available: 2,976 £1.41000 1 Minimum: 1 Cut Tape (CT)
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 8A (Ta), 40A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V 3.8V @ 36µA 28nC @ 10V ±20V 2080pF @ 50V
-
2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TSDSON-8-FL 8-PowerTDFN
BSZ097N10NS5ATMA1 Datasheet BSZ097N10NS5ATMA1 - Infineon Technologies BSZ097N10NS5ATMA1DKR-ND BSZ097N10NS5ATMA1 Infineon Technologies MOSFET N-CH 100V 8A/40A TSDSON 2,976 - Immediate Available: 2,976 Digi-Reel® 1 Minimum: 1 Digi-Reel®
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 8A (Ta), 40A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V 3.8V @ 36µA 28nC @ 10V ±20V 2080pF @ 50V
-
2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TSDSON-8-FL 8-PowerTDFN
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09:59:04 8/1/2021