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SIS412DN-T1-GE3 N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8
Price & Procurement
46,599 In Stock
Can ship immediately
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 0.44000 £0.44
10 0.39000 £3.90
25 0.36560 £9.14
100 0.26550 £26.55
250 0.25612 £64.03
500 0.22188 £110.94
1,000 0.18884 £188.84

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Alternate Package
  • Tape & Reel (TR)  : SIS412DN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 45,000 - Immediate
  • Unit Price: £0.17188
  • Digi-Reel®  : SIS412DN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 46,599 - Immediate
  • Unit Price: Digi-Reel®

SIS412DN-T1-GE3

Datasheet
Digi-Key Part Number SIS412DN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SIS412DN-T1-GE3
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Description MOSFET N-CH 30V 12A 1212-8 PPAK
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8

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Documents & Media
Datasheets SIS412DN
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Mult Dev Mfg/Test Qual 11/Sep/2019
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SIS412DN-T1-GE3CT