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SI2336DS-T1-GE3 N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
16,777 In Stock
Can ship immediately
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 0.39000 £0.39
10 0.33700 £3.37
25 0.31480 £7.87
100 0.23360 £23.36
250 0.22196 £55.49
500 0.18242 £91.21
1,000 0.14827 £148.27

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Alternate Package
  • Tape & Reel (TR)  : SI2336DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 15,000 - Immediate
  • Unit Price: £0.13718
  • Digi-Reel®  : SI2336DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 16,777 - Immediate
  • Unit Price: Digi-Reel®

SI2336DS-T1-GE3

Datasheet
Digi-Key Part Number SI2336DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2336DS-T1-GE3
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Description MOSFET N-CH 30V 5.2A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets Si2336DS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si2336DS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2336
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2336DS-T1-GE3CT