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SI2318CDS-T1-GE3 N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
54,247 In Stock
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Quantity
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Price Break Unit Price Extended Price
1 0.36000 £0.36
10 0.28800 £2.88
25 0.26320 £6.58
100 0.16540 £16.54
250 0.16356 £40.89
500 0.15316 £76.58
1,000 0.10415 £104.15

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Alternate Package
  • Tape & Reel (TR)  : SI2318CDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 48,000 - Immediate
  • Unit Price: £0.09987
  • Digi-Reel®  : SI2318CDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 54,247 - Immediate
  • Unit Price: Digi-Reel®

SI2318CDS-T1-GE3

Datasheet
Digi-Key Part Number SI2318CDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2318CDS-T1-GE3
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Description MOSFET N-CH 40V 5.6A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets Si2318CDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si2318CDS
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 20V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Part Number SI2318
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2318CDS-T1-GE3CT