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SSM3K56CT,L3F N-Channel 20V 800mA (Ta) 500mW (Ta) Surface Mount CST3
Price & Procurement
33,675 In Stock
Can ship immediately
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 0.37000 £0.37
10 0.27300 £2.73
25 0.23920 £5.98
100 0.12970 £12.97
250 0.12904 £32.26
500 0.10582 £52.91
1,000 0.07851 £78.51
2,500 0.06896 £172.39
5,000 0.06315 £315.76

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SSM3K56CTL3FTR-ND
  • Minimum Quantity: 10,000
  • Quantity Available: 20,000 - Immediate
  • Unit Price: £0.05462
  • Digi-Reel®  : SSM3K56CTL3FDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 33,675 - Immediate
  • Unit Price: Digi-Reel®

SSM3K56CT,L3F

Datasheet
Digi-Key Part Number SSM3K56CTL3FCT-ND
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Manufacturer

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Manufacturer Part Number SSM3K56CT,L3F
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Description MOSFET NCH 20V 800MA CST3
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 20V 800mA (Ta) 500mW (Ta) Surface Mount CST3

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Documents & Media
Datasheets SSM3K56CT
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVII-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 235mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 55pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package CST3
Package / Case 3-XFDFN
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SSM3K56CTL3FCT