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IRLZ34NPBF N-Channel 55V 30A (Tc) 68W (Tc) Through Hole TO-220AB
Price & Procurement
32,315 In Stock
Can ship immediately
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 0.95000 £0.95
10 0.85000 £8.50
25 0.80640 £20.16
100 0.60480 £60.48
250 0.59896 £149.74
500 0.51258 £256.29
1,000 0.41754 £417.54
2,500 0.41178 £1,029.45
5,000 0.37434 £1,871.72

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IRLZ34NPBF

Datasheet
Digi-Key Part Number IRLZ34NPBF-ND
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Manufacturer

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Manufacturer Part Number IRLZ34NPBF
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Description MOSFET N-CH 55V 30A TO-220AB
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Manufacturer Standard Lead Time 15 Weeks
Detailed Description

N-Channel 55V 30A (Tc) 68W (Tc) Through Hole TO-220AB

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Documents & Media
Datasheets IRLZ34NPbF
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources IRLZ34NPBF Saber Model
Featured Product Data Processing Systems
PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
PCN Packaging Mult Device Standard Label Chg 29/Sep/2017
HTML Datasheet IRLZ34NPbF
EDA / CAD Models IRLZ34NPBF by SnapEDA
Simulation Models IRLZ34NPBF Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50
Other Names *IRLZ34NPBF
SP001553290