IRF100B201 Infineon Technologies | Discrete Semiconductor Products

IRF100B201 N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB

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Product Overview

Digi-Key Part Number	IRF100B201-ND	Copy
Quantity Available	4,940 Can ship immediately
Manufacturer	Infineon Technologies	Copy
Manufacturer Part Number	IRF100B201	Copy
Description	MOSFET N-CH 100V 192A TO-220AB	Copy
Manufacturer Standard Lead Time	10 Weeks
Detailed Description	N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB	Copy

Documents & Media

Datasheets	IRF100(B,S)201
Other Related Documents	IR Part Numbering System
Featured Product	Data Processing Systems
PCN Assembly/Origin	Mult Dev Wafer Site REV 24/Apr/2019
Simulation Models	IRF100B201 Saber Model IRF100B201 Spice Model

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®, StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	192A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	255nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9500pF @ 50V
FET Feature	-
Power Dissipation (Max)	441W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3