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IPW65R041CFDFKSA1 N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3
Price & Procurement
1,534 In Stock
Can ship immediately
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 9.11000 £9.11
10 8.02800 £80.28
25 7.37680 £184.42
100 6.94310 £694.31
500 6.29214 £3,146.07
1,000 5.77140 £5,771.40
2,500 5.72012 £14,300.29

Submit a request for quotation on quantities greater than those displayed.

Unit Price
£9.11000

Excludes VAT

£10.93200

Includes VAT

IPW65R041CFDFKSA1

Datasheet
Digi-Key Part Number IPW65R041CFDFKSA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IPW65R041CFDFKSA1
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Description MOSFET N-CH 650V 68.5A TO247-3
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Manufacturer Standard Lead Time 39 Weeks
Detailed Description

N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3

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Customer Reference
Documents & Media
Datasheets IPW65R041CFD
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Site Add 20/Sep/2018
Simulation Models CoolMOS™ Power MOSFET 650V CFD2 Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 100V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 30
Other Names IPW65R041CFD
IPW65R041CFD-ND
SP000756288