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IMW120R045M1XKSA1 N-Channel 1.2kV 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Price & Procurement
546 In Stock
Can ship immediately
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 11.37000 £11.37
10 10.01900 £100.19
25 9.20680 £230.17
100 8.66540 £866.54
500 7.85296 £3,926.48
1,000 7.20307 £7,203.07
2,500 6.63441 £16,586.02
5,000 6.49901 £32,495.04

Submit a request for quotation on quantities greater than those displayed.

Unit Price
£11.37000

Excludes VAT

£13.64400

Includes VAT

IMW120R045M1XKSA1

Datasheet
Digi-Key Part Number IMW120R045M1XKSA1-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IMW120R045M1XKSA1
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Description SICFET N-CH 1.2KV 52A TO247-3
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Detailed Description

N-Channel 1.2kV 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41

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Customer Reference
Documents & Media
Datasheets IMW120R045M1
Featured Product Silicon Carbide CoolSiC™ MOSFET
EDA / CAD Models IMW120R045M1XKSA1 by SnapEDA
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolSiC™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1.2kV
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 15V
Vgs (Max) +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1.9nF @ 800V
FET Feature -
Power Dissipation (Max) 228W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
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Additional Resources
Standard Package 30
Other Names SP001346254