MBRM120L Datasheet by ON Semiconductor

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% ON Semiconductor8
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 7
1Publication Order Number:
MBRM120L/D
MBRM120LT1G,
NRVBM120LT1G,
MBRM120LT3G,
NRVBM120LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky POWERMITE employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage dropreverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the POWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Low Profile Maximum Height of 1.1 mm
Small Footprint Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = C (> 400 V)
AECQ101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics:
POWERMITE is JEDEC Registered as D0216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 20 VOLTS
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
M = Date Code
BCF = Device Code
G= PbFree Package
Device Package Shipping
ORDERING INFORMATION
MBRM120LT1G POWERMITE
(PbFree)
3,000 /
Tape & Reel
MBRM120LT3G POWERMITE
(PbFree)
12,000 /
Tape & Reel
NRVBM120LT1G POWERMITE
(PbFree)
3,000 /
Tape & Reel
NRVBM120LT3G POWERMITE
(PbFree)
12,000 /
Tape & Reel
M
BCFG
12
MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 V
Average Rectified Forward Current
(At Rated VR, TC = 135C)
IO1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135C)
IFRM 2.0
A
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM 50
A
Storage Temperature Tstg 55 to 150 C
Operating Junction Temperature TJ55 to 125 C
Voltage Rate of Change
(Rated VR, TJ = 25C)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoLead (Anode) (Note 1)
Thermal Resistance, JunctiontoTab (Cathode) (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
Rtjl
Rtjtab
Rtja
35
23
277
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 VFTJ = 25C TJ = 85CV
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
0.34
0.45
0.65
0.26
0.415
0.67
Maximum Instantaneous Reverse Current (Note 2), See Figure 4 IRTJ = 25C TJ = 85CmA
(VR = 20 V)
(VR = 10 V)
0.40
0.10
25
18
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
IF
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
vF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
VF
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.70.3 0.5 0.9
TJ = 85C
TJ = 125C
TJ = 40C
TJ = 25C
0.1
10
1.0
0.1
0.70.3 0.5 0.9
TJ = 85C
TJ = 125C
TJ = 25C
MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G
http://onsemi.com
3
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
VR, REVERSE VOLTAGE (VOLTS)
10E3
1.0E3
100E6
10E6
1.0E6
VR, REVERSE VOLTAGE (VOLTS)
5.0 10 15 200
100E6
10E6
5.0 10 15
TJ = 85C
TJ = 25C
TJ = 85C
TJ = 25C
100E3
10E3
1.0E3
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Ipk/Io = 5
Figure 5. Current Derating Figure 6. Forward Power Dissipation
45 7525
TL, LEAD TEMPERATURE (C)
1.8
1.2
1.0
0.8
0.2
0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.20
0.7
0.6
0.5
0.3
0.1
0
1.055 115105
1.4
0.4 0.8 1.2 1.6
0.4
125
1.6 SQUARE
WAVE dc
Ipk/Io = p
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io = p
SQUARE WAVE
dc
0.6
0.4
FREQ = 20 kHz
0.6 1.4
0.2
35 65 85 95
TJ, DERATED OPERATING TEMPERATURE (C)
C, CAPACITANCE (pF)
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
120
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
10 200
95
75
65
6.02.0 4.0 8.0 10 12 142.0 4.0 8.06.0
85
115
125
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 33.72C/W
119C/W
277.35C/W 338C/W
TJ = 25C
2014 16 18
105
16 18
204C/W
n. Z
MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G
http://onsemi.com
4
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T, TIME (s)
1.0
0.1
0.01
0.001
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
Figure 9. Thermal Response Junction to Lead
1000.10.00001
T, TIME (s)
1.0
0.1
0.01
0.0001 0.001 0.01 1.0 10
0.001
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
Figure 10. Thermal Response Junction to Ambient
E/ J L : l—qlmm 515+ mm a soda m any pmduns havem canducm on Sean
MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G
http://onsemi.com
5
PACKAGE DIMENSIONS
POWERMITE
CASE 45704
ISSUE E
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.75 2.05 0.069 0.081
B1.75 2.18 0.069 0.086
C0.85 1.15 0.033 0.045
D0.40 0.69 0.016 0.027
F0.70 1.00 0.028 0.039
H-0.05 +0.10 -0.002 +0.004
J0.10 0.25 0.004 0.010
K3.60 3.90 0.142 0.154
L0.50 0.80 0.020 0.031
R1.20 1.50 0.047 0.059
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
S
B
M
0.08 (0.003) C S
T
A
B
S
J
K
T
H
L
J
C
D
S
B
M
0.08 (0.003) C S
T
F
PIN 1
PIN 2
R
0.50 REF 0.019 REF
2.54
0.100
0.635
0.025
1.27
0.050
2.67
0.105 0.762
0.030
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
MBRM120L/D
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
LITERATURE FULFILLMENT:
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