NCS2211 Datasheet by ON Semiconductor

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6&0 ON Semiconductor“? HHHH HHHH o 9
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 3 1Publication Order Number:
NCS2211/D
NCS2211, NCV2211
Low Distortion Audio Power
Amplifier with Differential
Output and Shutdown Mode
Product Description
The NCS2211 is a high performance, low distortion Class A/B
audio amplifier. It is capable of delivering 1 W of output power into an
8W speaker bridge−tied load (BTL). The NCS2211 will operate over a
wide temperature range, and it is specified for single−supply voltage
operation for portable applications.
It features low distortion performance, 0.2% typical THD + N @
1 W and incorporates a shutdown/enable feature to extend battery life.
The shutdown/enable feature will reduce the quiescent current to 1 mA
maximum.
The NCS2211 is designed to operate over the −40°C to +85°C
temperature range, and is available in an 8−lead SOIC package and a
3 X 3 mm DFN8 package. The SOIC package is pin compatible with
equivalent function and comparable performance to competitive
devices as is the DFN8 package. The DFN8 has a low thermal
resistance of only 70°C/W plus has an exposed metal pad to facilitate
heat conduction to copper PCB material.
Low distortion, high power, low quiescent current, and small
packaging makes the NCS2211 suitable for applications including
notebook and desktop computers, PDAs, and speaker phones.
Features
Differential Output
1.0 W into an 8 W Speaker
1.5 W into a 4 W Speaker
Single Supply Operation: 2.7 V to 5.5 V
THD+N: 0.2% @ 1 W Output
Low Quiescent Current: 20 mA Max
Shutdown Current < 1.0 mA
Excellent Power Supply Rejection
Two Package Options: SOIC−8 Package and DFN8
Pin Compatible with Competitive Devices
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Desktop Computers
Notebook Computers
PDAs
Speaker Phones
Games
MARKING
DIAGRAMS
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(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
SOIC−8
D SUFFIX
CASE 751
1
8N2211
ALYWG
G
1
8
PIN ASSIGNMENT
1
N2211 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G= Pb−Free Package
NAMEPIN DESCRIPTION
Enable Enable (LOW)/Shutdown (HIGH)
2Bias Bias Output at (VCC−VEE)/2;
Bypass with Capacitor to
Reduce Noise
3IN+ Non−Inverting Input
4 IN− Inverting Input
5 OUT+ Output+
6VCC Positive Supply (Bypass with
10 mF in parallel with 0.1 mF)
7VEE Negative Supply (Connect to GND
for Single−Supply Operation)
8 OUT− Output−
DFN8
MN SUFFIX
CASE 506BJ
N2211
ALYWG
G
18
1
|_l|_l|_l|_l !_H_H_H_\ I 7 % (7) Input ' Figure 1. Block Diagram hllp://onsemi.com 2
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2
PIN CONNECTIONS for SOIC−8 and DFN8
1 8
2
3
4
7
6
5
(Top View)
Enable
Bias
IN+
IN−
OUT−
VEE
VCC
OUT+
Figure 1. Block Diagram
Output (+)
Bias
(−) Input
Output (−)
Enable
+
+
R2
R
R
R
R
R1
C1
C2
6
5
8
4
VEE
1
7
2
VCC
3
Filtering
(+) Input RL
High Low
Enable (Note 1) Shutdown Enabled
1. Enable (pin 1) must be actively driven for proper operation and cannot be left floating. See EN-
ABLE/SHUTDOWN CONTROL in the specification table for proper logic threshold levels.
MAXIMUM RATINGS
Parameter Symbol Rating Unit
Power Supply Voltages VCC 5.5 Vdc
Output Current IO500 mA
Maximum Junction Temperature (Note 2) TJ150 °C
Operating Ambient Temperature TA−40 to +85 °C
Storage Temperature Range Tstg −60 to +150 °C
Power Dissipation PD(See Graph) mW
Thermal Resistance, Junction−to−Air − SOIC−8
Thermal Resistance, Junction−to−Air − DFN8 (Note 4) qJA 117
70
°C/W
Moisture Sensitivity (Note 3) Level 1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
3. For additional information, see Application Note AND8003/D
4. As mounted on an 80x80x1.5 mm FR4 PCB with 650 mm2 and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA
51.1, 51.2, 51.3 test guidelines.
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DC ELECTRICAL CHARACTERISTICS (VCC = +5 V, AVD = 2, RL = 8 W, C2 = 0.1 mF, TA = 25°C, unless otherwise specified)
Symbol Characteristics Conditions Min Typ Max Unit
POWER SUPPLY
VCC Operating Voltage
Range 2.7 5.5 V
IS, ON Power Supply Current
− Enabled VCC = 2.7 V to 5.5 V
TA = −40°C to +85°C (Note 5) 20 mA
IS, OFF Power Supply Current
− Shutdown VCC = 2.7 V to 5.5 V 1.0 mA
PSRR Power Supply
Rejection Ratio VCC = 2.7 V to 5.5 V
TA = −40°C to +85°C 75 dB
ENABLE/SHUTDOWN CONTROL
VIH Enable Input High Device Shutdown
VCC = 2.7 V to 5.5 V 90% X VCC VCC V
VIL Enable Input Low Device Enabled
VCC = 2.7 V to 5.5 V GND 10% x VCC V
OUTPUT CHARACTERISTICS
VOH Output High Voltage From Either Output to GND
RL = 8 WVCC − 0.400 V
VOL Output Low Voltage From Either Output to GND
RL = 8 W0.400 V
Vout −off Differential Output
Offset Voltage VCC = 2.7 V to 5.5 V (Note 5)
TA = −40°C to +85°C$50 mV
IOOutput Current Output to Output 350 mA
AC ELECTRICAL CHARACTERISTICS (VCC = +5 V, AVD = 2, RL = 8 W, C2 = 0.1 mF, TA = 25°C, unless otherwise specified)
Symbol Characteristics Conditions Min Typ Max Unit
FREQUENCY DOMAIN PERFORMANCE
GBW Gain Bandwidth Product 12 MHz
Phase Margin AVD = +2, RL = 8 W, VCC = 5 V 80 °
THD+N Total Harmonic Distortion VCC = 5 V, f = 1 kHz, P = 1.0 W into 8 W
VCC = 5 V, f = 1 kHz, P = 0.5 W into 8 W
VCC = 3.3 V, f = 1 kHz, P = 0.35 W into 8 W
VCC = 2.7 V, f = 1 kHz, P = 0.25 W into 8 W
0.2
0.15
0.1
0.1
%
TIME DOMAIN RESPONSE
tON Turn on delay VCC = 5 V 1ms
tOFF Turn off delay VCC = 5 V 4ms
5. Guaranteed by design and/or characterization.
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TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C
VCC = 5.0 V
AVD = 20 (BTL)
RL = 8 W
TA = 25°C
VCC = 5.0 V
AVD = 2 (BTL)
RL = 8 W
Figure 2. THD + N vs. Frequency
(PL = 500 mW) Figure 3. THD + N vs. Frequency
(PL = 1 W)
FREQUENCY (Hz)
10 k1 k10020
0.01
0.1
1
Figure 4. THD + N vs. Frequency
(PL = 500 mW) Figure 5. THD + N vs. Frequency
(PL = 1 W)
Figure 6. THD + N vs. Frequency
(PL = 500 mW) Figure 7. THD + N vs. Frequency
(PL = 1 W)
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.1
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.1
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.01
0.1
1
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.1
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.1
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
TA = 25°C
VCC = 5.0 V
AVD = 2 (BTL)
RL = 8 W
TA = 25°C
VCC = 5.0 V
AVD = 10 (BTL)
RL = 8 W
TA = 25°C
VCC = 5.0 V
AVD = 20 (BTL)
RL = 8 W
TA = 25°C
VCC = 5.0 V
AVD = 10 (BTL)
RL = 8 W
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 8. THD + N vs. Frequency
(PL = 350 mW) Figure 9. THD + N vs. Frequency
(PL = 250 mW)
FREQUENCY (Hz)
10 k1 k10020
0.01
0.1
1
Figure 10. THD + N vs. Frequency
(PL = 350 mW) Figure 11. THD + N vs. Frequency
(PL = 250 mW)
Figure 12. THD + N vs. Frequency
(PL = 350 mW) Figure 13. THD + N vs. Frequency
(PL = 250 mW)
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.01
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.1
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.01
0.1
1
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.01
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
FREQUENCY (Hz)
10 k1 k10020
0.01
1
10
THD + N (%)
C2 = 0.1 mF
C2 = 1.0 mF
TA = 25°C
VCC = 3.3 V
AVD = 2 (BTL)
RL = 8 W
TA = 25°C
VCC = 3.3 V
AVD = 10 (BTL)
RL = 8 W
TA = 25°C
VCC = 3.3 V
AVD = 20 (BTL)
RL = 8 W
TA = 25°C
VCC = 2.7 V
AVD = 2 (BTL)
RL = 8 W
TA = 25°C
VCC = 2.7 V
AVD = 10 (BTL)
RL = 8 W
TA = 25°C
VCC = 2.7 V
AVD = 20 (BTL)
RL = 8 W
0.1
0.1
0.1
0.1
a Lead DFN 7 50 mm2 some 7150 mm2 SOICrB 7 ‘ 50 mm2
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TYPICAL PERFORMANCE CHARACTERISTICS
SOIC−8 − 150 mm2
8 Lead
DFN − 50 mm2
SOIC−8 −
50 mm2
8 Lead DFN − 650 mm2
8 Lead DFN −
150 mm2
SOIC−8 −
650 mm2
VCC = 5.0 V
VCC = 2.7 V
VCC = 3.3 V
RL = 8 W
VCC = 5.0 V
VCC = 2.7 V
VCC = 3.3 V
RL = 4 W
Figure 14. THD + N vs. POUTPUT
(Frequency = 20 Hz) Figure 15. SOA Curve with PCB Copper
Thickness 2 oz and Various Areas
POUTPUT (W)
1010.10.010.0010.0001
0.01
1
10
100
Figure 16. THD + N vs. POUTPUT
(Frequency = 1 kHz) Figure 17. Pout vs. Load Resistance
T−AMBIENT (°C)
150125100755025
0
0.25
0.50
0.75
1.00
1.25
1.50
Figure 18. THD + N vs. POUTPUT
(Frequency = 20 kHz) Figure 19. Power Dissipation vs. Output
Power
OUTPUT POWER (W)
1.51.00.50
0
0.2
0.4
0.6
0.8
1.0
1.2
THD + N (%)
STEADY STATE POWER (W)INTERNAL POWER DISSIPATION (W)
2.0
0.1
VCC = 5 V
TA = 25°C
C2 = 0.1 mF
AVD = 2 (BTL)
RL = 8 W
VCC = 5.0 V
VCC = 2.7 V
VCC = 3.3 V
POUTPUT (W)
1010.10.010.0010.0001
0.01
1
10
100
THD + N (%)
0.1
TA = 25°C
C2 = 0.1 mF
AVD = 2 (BTL)
RL = 8 W
VCC = 5.0 V
VCC = 2.7 V
VCC = 3.3 V
POUTPUT (W)
1010.10.010.0010.0001
0.01
1
10
100
THD + N (%)
0.1
TA = 25°C
C2 = 0.1 mF
AVD = 2 (BTL)
RL = 8 W
LOAD RESISTANCE (W)
4832281684
0
0.2
0.4
0.6
0.8
1.0
2.0
Pout (W)
12 2420 444036
1.2
1.4
1.6
1.8
1.4
m- .m mm... m." pm. Iurnr H mm: m
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 20. Turn−on Time
Figure 21. Turn−off Time
Figure 22. Gain and Phase Shift vs. Frequency
FREQUENCY (Hz)
100 M10 M1 M100 k10 k1 k10
−20
0
20
40
60
100
GAIN (dB)
80
100
PHASE SHIFT (degrees)
180
135
90
45
0
−45
−90
Channel 1: Enable Logic
and OUT+ and OUT−
Channel 2: Differential
Output
Time Base: 1 mSec per
Division
Channel 1: SHUTDOWN
Logic and OUT+ and OUT−
Channel 2: Differential
Output
Time Base: 5 mSec per
Division
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 23. Power−Supply Rejection
FREQUENCY OF POWER−SUPPLY RIPPLE (Hz)
VCC = 5 V
RL = 8 W
Rf = Rg = 20 kW
Avd = 1
Cbypass = 10 mF ⎢⎢ 0.1 mF
C2 = 0.1 mF
Ripple = 200 mVp−p
10 100 1 k 10 k
(dB)
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
+0
vcc s ”HI-«- Ewas ' ompm (7) / Figure 24. hllp://onsemi.com 9
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9
APPLICATIONS INFORMATION
The NCS2211 is unity gain stable and therefore does not
require any compensation, but a proper power−supply
bypass is required as shown in Figure 24. Performance will
be enhanced by adding a filter capacitor (C2) to the
mid−supply node (pin 2). See Typical Performance
Characteristics for details.
It is preferable to AC couple the input to avoid a large
DC output offset.
Both outputs can be driven to within 400 mV of either
supply rail with an 8 W load.
Typical Application of the Device:
6
Output (−)
VCC
Bias
(−) Input
Output (+)
Enable
+
+
R2
20k
R1
20k
C1
C2
0.1 mF
Figure 24.
+5 V
10 mF⎟⎟ 0.1 mF
C3
0.1 mF
2 VPP
5
8
17
VEE
2
4
3
Filtering
(+) Input
RL
THERMAL CONSIDERATIONS
Care must be taken to not exceed the maximum junction
temperature of the device (150°C). Figure 15 shows the
tradeoff between output power and junction temperature for
different areas of exposed PCB copper (2 oz). If the
maximum power is exceeded momentarily, normal circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in an “overheated” condition
for an extended period can result in device burnout. To
ensure proper operation, it is important to observe the SOA
curves.
GAIN
Since the output is differential, the gain from input to the
speaker is: AVD = 2 x R2/R1. For low level input signals,
THD will be optimized by pre−amplifying the signal and
running the NCS2211 at gain AVD = 2 and C2=1 mF.
BIAS FILTERING
Even though the NCS2211 will operate nominally with no
filter capacitor on pin 2, THD performance will be improved
dramatically with a filter capacitor installed (see Typical
Performance Characteristics). In addition a C2 filter
capacitor at pin 2 will suppress start−up popping noise. To
insure optimal suppression the time constant of the bias
filtering needs to be greater than the time constant of the
input capacitive coupling circuit, that is C2 x 25 k > C1 x R1.
ORDERING INFORMATION
Device Package Shipping
NCS2211DR2G SOIC−8
(Pb−Free) 2500 / Tape & Reel
NCV2211DR2G*
NCS2211MNTXG DFN−8
(Pb−Free) 3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
pm 1 REFERENCE \ ‘ El: TOP VIEW // ¢ 1 ,4 an Wm 5| “LL {HELL 22¢ ,7“ a: , ,, 7+, ,7 7 £2 ‘ ax K1 1 ¢ 7 77:77,, Tjfl le'l H5 \ Eva} EPthn CAM 7 ijimfi Bonom VIEW 0-05 C T A F‘ hllp :Nonsemi .com 1 D
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PACKAGE DIMENSIONS
DFN8 3x3, 0.5P
CASE 506BJ
ISSUE O
SOLDERMASK DEFINED
PIN 1
REFERENCE
A
B
C0.10
2X
2X
TOP VIEW
D
E
C0.10
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30
MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
E2
BOTTOM VIEW
b
0.10
8X
L14
0.05
CAB
C
D2
e
K
85
8X
8X
(A3) C
C0.05
8X
C0.05
SIDE VIEW A1
A
SEATING
PLANE
DIM MIN MAX
MILLIMETERS
A0.80 1.00
A1 0.00 0.05
A3 0.20 REF
b0.18 0.30
D3.00 BSC
D2 1.64 1.84
E3.00 BSC
E2 1.35 1.55
e0.50 BSC
K0.20 −−
L0.30 0.50
NOTE 3
L
DETAIL A
OPTIONAL
CONSTRUCTION
L1
DETAIL A
DETAIL B
EDGE OF PACKAGE
MOLD CMPD
EXPOSED Cu
L
OPTIONAL
CONSTRUCTION
OPTIONAL
CONSTRUCTION
L1 0.00 0.03
NOTE 4
DETAIL B
3.30
8X
DIMENSION: MILLIMETERS
0.63
1.55
1.85
0.50
PITCH
8X
0.35
MOUNTING FOOTPRINT
DETAIL A
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PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AK
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒmm
inchesǓ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SEATING
PLANE
1
4
58
N
J
X 45_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
BS
D
H
C
0.10 (0.004)
DIM
AMIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0 8 0 8
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
−X−
−Y−
G
M
Y
M
0.25 (0.010)
−Z−
Y
M
0.25 (0.010) ZSXS
M
____
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limitation special, consequential or incidental damages.Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NCS2211/D
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