BSC010N04LSI Datasheet by Infineon Technologies

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E 3 D Table1 Key Performance Parameters E 1 D E 1 D E 3 D
1
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
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67
8
TDSON-8FL(enlargedsourceinterconnection)
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•Optimizedforsynchronousrectification
•IntegratedmonolithicSchottky-likediode
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 40 V
RDS(on),max 1.05 m
ID100 A
QOSS 83 nC
QG(0V..10V) 87 nC
Type/OrderingCode Package Marking RelatedLinks
BSC010N04LSI TDSON-8 FL 010N04LI -
1) J-STD20 and JESD22
(imeon
2
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
(imeon Table 2 Maximum ratings Table 3 Thermal characteristics
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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-
-
-
-
-
-
-
-
-
-
100
100
100
100
37
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
Pulsed drain current2) ID,pulse - - 400 A TC=25°C
Avalanche current, single pulse3) IAS - - 50 A TC=25°C
Avalanche energy, single pulse EAS - - 230 mJ ID=50A,RGS=25
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
139
2.5 WTC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom RthJC - 0.5 0.9 K/W -
Thermal resistance, junction - case,
top RthJC - - 20 K/W -
Device on PCB,
6 cm2 cooling area1) RthJA - - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
(ifiieon Table 4 Static characteristics Table 5 Dynamic characteristics
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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=10mA
Breakdown voltage temperature
coefficient dV(BR)DSS/dTj- 30 - mV/K ID=10mA,referencedto25°C
Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS -
-
-
3
0.5
-mA VDS=32V,VGS=0V,Tj=25°C
VDS=32V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
1.1
0.9
1.4
1.05 mVGS=4.5V,ID=50A
VGS=10V,ID=50A
Gate resistance1) RG- 0.8 1.6 -
Transconductance gfs 130 260 - S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 6200 8680 pF VGS=0V,VDS=20V,f=1MHz
Output capacitance1) Coss - 1900 2660 pF VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance1) Crss - 140 280 pF VGS=0V,VDS=20V,f=1MHz
Turn-on delay time td(on) - 9 - ns VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
Rise time tr- 4 - ns VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
Turn-off delay time td(off) - 33 - ns VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
Fall time tf- 7 - ns VDD=20V,VGS=10V,ID=30A,
RG,ext=1.6
1) Defined by design. Not subject to production test
(imeon Table 6 Gate char e characteristics ‘ Table 7 Reverse diode
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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 15 - nC VDD=20V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 9.9 - nC VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge2) Qgd - 14 20 nC VDD=20V,ID=50A,VGS=0to10V
Switching charge Qsw - 19 - nC VDD=20V,ID=50A,VGS=0to10V
Gate charge total2) Qg- 87 122 nC VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 2.4 - V VDD=20V,ID=50A,VGS=0to10V
Gate charge total2) Qg- 45 63 nC VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET Qg(sync) - 76 - nC VDS=0.1V,VGS=0to10V
Output charge2) Qoss - 83 116 nC VDD=20V,VGS=0V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 100 A TC=25°C
Diode pulse current IS,pulse - - 400 A TC=25°C
Diode forward voltage VSD - 0.57 0.7 V VGS=0V,IF=20A,Tj=25°C
Reverse recovery charge Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs
1) See Gate charge waveforms for parameter definition
2) Defined by design. Not subject to production test
(ifileon
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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 40 80 120 160
0
20
40
60
80
100
120
140
160
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 40 80 120 160
0
20
40
60
80
100
120
ID=f(TC);VGS10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
(ifileon
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OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0123
0
100
200
300
400
500
600
700
800
4 V
4.5 V
5 V
10 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[m]
0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
3.2 V
3.5 V
4 V
4.5 V
5 V 6 V 8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
012345
0
80
160
240
320
400
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 25 50 75 100
0
80
160
240
320
400
gfs=f(ID);Tj=25°C
(ifileon
8
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[m]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
max
typ
RDS(on)=f(Tj);ID=50A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
VGS(th)=f(Tj);VGS=VDS;IDS=10mA
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 10 20 30 40
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.4 0.8 1.2
10-1
100
101
102
103
-55 °C
25 °C
125 °C
150 °C
IF=f(VSD);parameter:Tj
(ifileon Vwmy ng) Q.w Qa-I-
9
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 20 40 60 80 100
0
2
4
6
8
10
12
32 V
20 V
8 V
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
VSD[V]
IDSS[A]
0 5 10 15 20 25 30 35
10-6
10-5
10-4
10-3
10-2
125 °C
100 °C
75 °C
25 °C
IDSS=f(VDS);VGS=0V;parameter:Tj
Diagram Gate charge waveforms
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10
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
5PackageOutlines
Figure1OutlineTDSON-8FL,dimensionsinmm/inches-IndustrialGrade
(imeon TDSON-S Fused Leads: Boardpads & Apertures g m y do" no “‘ E E u: y, i a m ..7 Q a" 5‘ , m Dan E E m Eda r , , U r! ,, mu n ”a” , :2!) Mn ~ copper solder mask stencil apertures
11
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
Figure2OutlineFootprint(TDSON-8FL)
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12
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
Figure3OutlineTape(TDSON-8FL)
(imeon
13
OptiMOSTMPower-MOSFET,40V
BSC010N04LSI
Rev.2.3,2018-08-17Final Data Sheet
RevisionHistory
BSC010N04LSI
Revision:2018-08-17,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.2 2016-05-04 Update footnotes and insert max values
2.3 2018-08-17 Update timing parameters
Trademarks
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Publishedby
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Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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