BAT46W Datasheet by Vishay Semiconductor Diodes Division

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VISHAY. 3D ab‘e ww shaycom/doc 99912 ® ROHS cowum DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000
BAT46W
www.vishay.com Vishay Semiconductors
Rev. 2.0, 23-Feb-18 1Document Number: 85663
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
For general purpose applications
• This diode features very low turn-on voltage
and fast switching
This device is protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
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Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT
CONFIGURATION TYPE MARKING REMARKS
BAT46W BAT46W-E3-08 or BAT46W-E3-18 Single L6 Tape and reel
BAT46W-HE3-08 or BAT46W-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 100 V
Forward continuous current (1) IF150 mA
Repetitive peak forward current (1) tp < 1 s, < 0.5 IFRM 350 mA
Surge forward current (1) tp < 10 ms IFSM 750 mA
Power dissipation (1) Tamb = 65 °C Ptot 150 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 300 K/W
Junction temperature Tj125 °C
Operating temperature range Top -55 to +125 °C
Storage temperature range Tstg -55 to +150 °C
VISHAY. 1000 DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
BAT46W
www.vishay.com Vishay Semiconductors
Rev. 2.0, 23-Feb-18 2Document Number: 85663
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test; tp 300 μs, < 2 %
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typical Instantaneous Forward Characteristics
Fig. 2 - Typical Reverse Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 100 V
Leakage current (1)
VR = 1.5 V IR0.5 μA
VR = 1.5 V, Tj = 60 °C IRA
VR = 10 V IR0.8 μA
VR = 10 V, Tj = 60 °C IR7.5 μA
VR = 50 V IRA
VR = 50 V, Tj = 60 °C IR15 μA
VR = 75 V IRA
VR = 75 V, Tj = 60 °C IR20 μA
Forward voltage (1)
IF = 0.1 mA VF250 mV
IF = 10 mA VF450 mV
IF = 250 mA VF1000 mV
Diode capacitance VR = 0 V, f = 1 MHz CD10 pF
VR = 1 V, f = 1 MHz CD6pF
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01 1.2 1 0.8 0.6 0.4 0.2 0
18546
V
F - Forward Voltage (V)
= 60 °CT
j
25 °C
18547
I- Reverse Leakage Current (µA)
R
0.01
0.1
1
10
100
020406080100
VR- Reverse Voltage (V)
Tj= 60 °C
Tj= 25 °C
200
18548 T
amb
- Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
P - Power Dissipation (mW)
tot
VISHAY. DwodesAmencas©wshay£om DwodesAswa@wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
BAT46W
www.vishay.com Vishay Semiconductors
Rev. 2.0, 23-Feb-18 3Document Number: 85663
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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